IEC - International Electrotechnical Commission - IEC 60747-9:2007
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
revised
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| Organization: | IEC - International Electrotechnical Commission |
| Publication Date: | 26 September 2007 |
| Status: | revised |
| Page Count: | 117 |
| ICS Code (Transistors): | 31.080.30 |
| ICS Code (Semiconductor devices in general): | 31.080.01 |
abstract:
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for... View More
Document History
November 13, 2019
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate...
IEC 60747-9:2007
September 26, 2007
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate...
November 20, 2001
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs). This consolidated version...
August 20, 2001
Amendment 1 - Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
A description is not available for this item.
August 28, 1998
Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs).