IEC - International Electrotechnical Commission - IEC 60747-9:2019
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
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| Organization: | IEC - International Electrotechnical Commission |
| Publication Date: | 13 November 2019 |
| Status: | published |
| Page Count: | 160 |
| ICS Code (Semiconductor devices in general): | 31.080.01 |
| ICS Code (Transistors): | 31.080.30 |
abstract:
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate... View More
Document History
IEC 60747-9:2019
November 13, 2019
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate...
September 26, 2007
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate...
November 20, 2001
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs). This consolidated version...
August 20, 2001
Amendment 1 - Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
A description is not available for this item.
August 28, 1998
Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs).