IEC - International Electrotechnical Commission - IEC 60747-9:1998
Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
revised
Buy Now
| Organization: | IEC - International Electrotechnical Commission |
| Publication Date: | 28 August 1998 |
| Status: | revised |
| Page Count: | 51 |
| ICS Code (Transistors): | 31.080.30 |
abstract:
Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs).
Document History
November 13, 2019
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate...
September 26, 2007
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate...
November 20, 2001
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs). This consolidated version...
August 20, 2001
Amendment 1 - Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
A description is not available for this item.
IEC 60747-9:1998
August 28, 1998
Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs).