IEC - International Electrotechnical Commission - IEC 60747-9:1998/AMD1:2001

Amendment 1 - Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

revised
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Organization: IEC - International Electrotechnical Commission
Publication Date: 20 August 2001
Status: revised
Page Count: 79
ICS Code (Transistors): 31.080.30

Document History

September 26, 2007
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate...
November 20, 2001
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs). This consolidated version...
IEC 60747-9:1998/AMD1:2001
August 20, 2001
Amendment 1 - Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
A description is not available for this item.
August 28, 1998
Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs).
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