IEEE - Institute of Electrical and Electronics Engineers, Inc. - PC62.59/D3, Sept 2018

IEEE Draft Standard for Test Methods and Preferred Values for Silicon PN-Junction Clamping Diodes

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Organization: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 27 April 2019
Status: inactive
Page(s): 1 - 40
ISBN (Electronic): 978-1-5044-5778-1
Standard:

The basic electrical parameters to be met by silicon PN junction voltage clamping components used for the protection of telecommunications equipment or lines from surges are defined in this... View More

Document History

October 31, 2019
IEEE Standard for Test Methods and Preferred Values for Silicon PN-Junction Clamping Diodes
Supersedes IEEE C62.35-2010 and IEEE C62.35-2010/Cor1-2018. The basic electrical parameters to be met by silicon PN junction voltage clamping components used for the protection of telecommunications...
September 3, 2019
IEEE Approved Draft Standard for Test Methods and Preferred Values for Silicon PN-Junction Clamping Diodes
The basic electrical parameters to be met by silicon PN junction voltage clamping components used for the protection of telecommunications equipment or lines from surges are defined in this standard....
PC62.59/D3, Sept 2018
April 27, 2019
IEEE Draft Standard for Test Methods and Preferred Values for Silicon PN-Junction Clamping Diodes
The basic electrical parameters to be met by silicon PN junction voltage clamping components used for the protection of telecommunications equipment or lines from surges are defined in this standard....
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