IEC - International Electrotechnical Commission - IEC 60749-4:2002/COR1:2003

Corrigendum 1 - Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)

revised
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Organization: IEC - International Electrotechnical Commission
Publication Date: 12 August 2003
Status: revised
ICS Code (Semiconductor devices in general): 31.080.01
abstract:

Modification of the validity date: now put at 2007.

Document History

March 3, 2017
Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
IEC 60749-4:2017 provides a highly accelerated temperature and humidity stress test (HAST) for the purpose of evaluating the reliability of non-hermetic packaged semiconductor devices in humid...
IEC 60749-4:2002/COR1:2003
August 12, 2003
Corrigendum 1 - Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
Modification of the validity date: now put at 2007.
April 12, 2002
Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
Provides a highly accelerated temperature and humidity stress test (HAST) for the purpose of evaluating the reliability of non-hermetic packaged semiconductor devices in humid environments. The...
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