ASTM International - ASTM F1893-18

Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices

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Organization: ASTM International
Publication Date: 1 March 2018
Status: active
Page Count: 7
ICS Code (Semiconductor devices in general): 31.080.01
significance And Use:

5.1 The use of FXR or LINAC radiation sources for the determination of high dose-rate burnout in semiconductor devices is addressed in this guide. The goal of this guide is to provide a systematic... View More

scope:

1.1 This guide defines the detailed requirements for testing semiconductor devices for short-pulse high dose-rate ionization-induced survivability and burnout failure. The test facility shall be capable of providing the necessary dose rates to perform the measurements. Typically, large flash X-ray (FXR) machines operated in the photon mode, or FXR e-beam facilities are utilized because of their high dose-rate capabilities. Electron Linear Accelerators (LINACs) may be used if the dose rate is sufficient. Two modes of test are described: (1) A survivability test, and (2) A burnout failure level test.

1.2 The values stated in International System of Units (SI) are to be regarded as standard. No other units of measurement are included in this standard.

1.3 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

Document History

ASTM F1893-18
March 1, 2018
Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices
1.1 This guide defines the detailed requirements for testing semiconductor devices for short-pulse high dose-rate ionization-induced survivability and burnout failure. The test facility shall be...
January 1, 2011
Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices
The use of FXR or LINAC radiation sources for the determination of high dose-rate burnout in semiconductor devices is addressed in this guide. The goal of this guide is to provide a systematic...
May 10, 1998
Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
The use of FXR radiation sources for the determination of high dose-rate burnout in semiconductor devices is addressed in this guide. The goal of this guide is to provide a systematic approach to...
May 10, 1998
Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
1.1 This guide defines the detailed requirements for testing microcircuits for short pulse high dose-rate ionization-induced failure. Large flash x-ray (FXR) machines operated in the photon mode, or...
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