IEC - International Electrotechnical Commission - IEC 62047-25:2016
Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
published
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| Organization: | IEC - International Electrotechnical Commission |
| Publication Date: | 29 August 2016 |
| Status: | published |
| Page Count: | 45 |
| ICS Code (Other semiconductor devices): | 31.080.99 |
abstract:
IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based... View More
Document History
IEC 62047-25:2016
August 29, 2016
Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based...