IEC - International Electrotechnical Commission - IEC 62418:2010
Semiconductor devices - Metallization stress void test
published
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| Organization: | IEC - International Electrotechnical Commission |
| Publication Date: | 22 April 2010 |
| Status: | published |
| Page Count: | 34 |
| ICS Code (Semiconductor devices in general): | 31.080.01 |
abstract:
IEC 62418:2010 describes a method of metallization stress void test and associated criteria. It is applicable to aluminium (Al) or copper (Cu) metallization.
Document History
IEC 62418:2010
April 22, 2010
Semiconductor devices - Metallization stress void test
IEC 62418:2010 describes a method of metallization stress void test and associated criteria. It is applicable to aluminium (Al) or copper (Cu) metallization.