IEC - International Electrotechnical Commission - IEC 60747-8:1984/AMD1:1991
Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
revised
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| Organization: | IEC - International Electrotechnical Commission |
| Publication Date: | 18 July 1991 |
| Status: | revised |
| Page Count: | 17 |
| ICS Code (Transistors): | 31.080.30 |
abstract:
Deals with power MOSFETs.
Document History
December 15, 2010
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:2010 gives standards for the following categories of field-effect transistors: - type A: junction-gate type; - type B: insulated-gate depletion (normally on) type; - type C:...
December 21, 2000
S emiconductor devices - Part 8: Field-effect transistors
Gives standards for the following categories of field-effect transistors : -Type A: junction-gate type; -Type B: insulated-gate depletion type; -Type C: insulated-gate enhancement type.
December 17, 1993
Amendment 2 - Semiconductor devices - Discrete devices - Part 8: Field-effect
transistors
A description is not available for this item.
IEC 60747-8:1984/AMD1:1991
July 18, 1991
Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect
transistors
Deals with power MOSFETs.
November 30, 1984
Semiconductor devices - Discrete devices - Part 8: Field-effect
transistors
Gives standards for the following categories of field-effect transistors : -Type A: junction-gate type; -Type B: insulated-gate depletion type; -Type C: insulated-gate enhancement type.