ASTM International - ASTM F1190-99(2005)

Standard Guide for Neutron Irradiation of Unbiased Electronic Components

historical
Buy Now
Organization: ASTM International
Publication Date: 1 January 2005
Status: historical
Page Count: 5
ICS Code (Electronic components in general): 31.020
ICS Code (Semiconductor devices in general): 31.080.01
significance And Use:

Semiconductor devices are permanently damaged by reactor spectrum neutrons. The effect of such damage on the performance of an electronic component can be determined by measuring the component... View More

scope:

1.1 This guide strictly applies only to the exposure of unbiased silicon (SI) or gallium arsenide (GaAs) semiconductor components (integrated circuits, transistors, and diodes) to neutron radiation from a nuclear reactor source to determine the permanent damage in the components. Validated 1-MeV damage functions codified in National Standards are not currently available for other semiconductor materials.

1.2 Elements of this guide with the deviations noted may also be applicable to the exposure of semiconductors comprised of other materials except that validated 1-MeV damage functions codified in National standards are not currently available.

1.3 Only the conditions of exposure are addressed in this guide. The effects of radiation on the test sample should be determined using appropriate electrical test methods.

1.4 This guide addresses those issues and concerns pertaining to irradiations with reactor spectrum neutrons.

1.5 System and subsystem exposures and test methods are not included in this guide.

1.6 This guide is applicable to irradiations conducted with the reactor operating in either the pulsed or steady-state mode. The range of interest for neutron fluence in displacement damage semiconductor testing range from approximately 109 to 1016 n/cm 2.

1.7 This guide does not address neutron-induced single or multiple neutron event effects or transient annealing.

1.8 This guide provides an alternative to Test Method 1017.3, Neutron Displacement Testing, a component of MIL-STD-883 and MIL-STD-750. The Department of Defense has restricted use of these MIL-STDs to programs existing in 1995 and earlier.

This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Document History

March 1, 2018
Standard Guide for Neutron Irradiation of Unbiased Electronic Components
1.1 This guide strictly applies only to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components (integrated circuits, transistors, and diodes) to neutron radiation...
October 1, 2011
Standard Guide for Neutron Irradiation of Unbiased Electronic Components
1.1 This guide strictly applies only to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components (integrated circuits, transistors, and diodes) to neutron radiation...
ASTM F1190-99(2005)
January 1, 2005
Standard Guide for Neutron Irradiation of Unbiased Electronic Components
1.1 This guide strictly applies only to the exposure of unbiased silicon (SI) or gallium arsenide (GaAs) semiconductor components (integrated circuits, transistors, and diodes) to neutron radiation...
January 10, 1999
Standard Guide for Neutron Irradiation of Unbiased Electronic Components
1.1 This practice applies to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components to neutron radiation from a nuclear reactor source. Only the conditions of...
January 10, 1999
Standard Guide for Neutron Irradiation of Unbiased Electronic Components
1.1 This practice applies to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components to neutron radiation from a nuclear reactor source. Only the conditions of...
Advertisement