ASTM International - ASTM F978-90(1996)e1
Standard Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques
|Publication Date:||10 January 2001|
|ICS Code (Semiconducting materials):||29.045|
1.1 This test method covers three procedures for determining the density, activation energy, and prefactor of the exponential expression for the emission rate of deep-level defect centers in semiconductor depletion regions by transient-capacitanc
1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.