ASTM International - ASTM F616M-96

Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)

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Organization: ASTM International
Publication Date: 10 June 1996
Status: historical
Page Count: 3
ICS Code (Measurement of electrical and magnetic quantities): 17.220.20
ICS Code (Semiconducting materials): 29.045
scope:

1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current.

Note 1-MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor.

1.2 This test method is applicable to all enhancement-mode and depletion-mode MOSFETs. This test method specifies positive voltage and current, conventions specifically applicable to n-channel MOSFETs. The substitution of negative voltage and negative current makes the method directly applicable to p-channel MOSFETs.

1.3 The d-c test method is applicable for the range of drain voltages greater than 0 V but less than the drain breakdown voltage.

1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Document History

ASTM F616M-96
June 10, 1996
Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current. Note 1-MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor. 1.2 This...
June 10, 1996
Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric) (Withdrawn 2009)
1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current. Note 1—MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor. 1.2 This...
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