IEC - International Electrotechnical Commission - IEC 63068-3:2020
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
published
Buy Now
| Organization: | IEC - International Electrotechnical Commission |
| Publication Date: | 13 July 2020 |
| Status: | published |
| Page Count: | 51 |
| ICS Code (Other semiconductor devices): | 31.080.99 |
abstract:
IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally,... View More
Document History
IEC 63068-3:2020
July 13, 2020
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this...