IEC - International Electrotechnical Commission - IEC 63068-1:2019

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

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Organization: IEC - International Electrotechnical Commission
Publication Date: 30 January 2019
Status: published
Page Count: 23
ICS Code (Other semiconductor devices): 31.080.99
abstract:

IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and... View More

Document History

IEC 63068-1:2019
January 30, 2019
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and...
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