IEC - International Electrotechnical Commission - IEC 63068-2:2019

Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

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Organization: IEC - International Electrotechnical Commission
Publication Date: 30 January 2019
Status: published
Page Count: 25
ICS Code (Other semiconductor devices): 31.080.99
abstract:

IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally,... View More

Document History

IEC 63068-2:2019
January 30, 2019
Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally,...
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