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Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure
2007 Edition, May 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A quaternary-barrier structure is employed to reduce the strain at the interface between the quantum well and barriers for GaInNAs/GaAs materials. A very-low room-temperature threshold current...

Very low-threshold-current-density 1.34-μm gainnas/gaas quantum well lasers with a quaternary-barrier structure
2007 Edition, May 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A quaternary-barrier structure is employed to reduce the strain at the interface between the quantum well and barriers for GaInNAs/GaAs materials. A very-low room-temperature threshold current...

Very low threshold current density of 13 /spl mu/m-range GaInNAsSb/GaNAs 5QWs lasers
2002 Edition, January 1, 2002 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

1.3 /spl mu/m-range GaInNAs-based strain-compensated 5QWs lasers were successfully grown for the first time. The lasers oscillated under pulsed operation at 1.282 /spl mu/m at room temperature with the very low threshold current density...

One and three-stack quantum dot lasers with very low threshold current density
2000 Edition, January 1, 2000 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Summary form only given. Quantum dot lasers with the dots-in-a-well (DWELL) structure have demonstrated very low threshold current densities. In particular, DWELL lasers with a single layer of InAs...

Very low threshold current density continuous-wave quantum dot laser diode
2008 Edition, September 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this presentation, a continuous-wave room temperature lasing at a threshold current density of 11.7 A/cm2 is reported. This is the lowest threshold current density ever reported for continuous-wave room temperature operation of...

Analysis of very low threshold current density GaInNAs laser at low temperature
2006 Edition, January 1, 2006 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

GaInNAs lasers grown on GaAs substrates are very attractive for the application of uncooled operation with high performance at 1.3 mum region. However, fundamental material and device properties which are important for device design are still not fully understood....

CW InGaAsP/InP injection lasers with very low threshold current density at room temperature
1985 Edition, Volume 21, June 1, 1985 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Laser diodes of InGaAsP/InP are studied with a modified double heterostructure containing an ultrathin ( <0.1 \mu m) active layer and adjacent guiding layers transparent for laser emission ("three-layer waveguide" structure). Due to improved optical confinement in...

Very low threshold current density of 1.3-/spl mu/m-range GaInNAsSb-GaNAs3 and 5 QWs lasers
2003 Edition, Volume 9, September 1, 2003 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The dependence of the threshold current density on the number of wells for 1.3-/spl mu/m-range edge emitting lasers using GaInNAsSb novel material, at which the incorporation of the small amount of Sb make the two-dimensional growth condition wide, is studied. The...

Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser
2000 Edition, Volume 12, March 1, 2000 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Continuous-wave (CW) lasing operation with a very low threshold current density (J/sub th/=32.5 A/cm2) has been achieved at room temperature by a ridge waveguide quantum-dot (QD) laser containing a single InAs QD...

Very low threshold current density for pseudomorphic quaternary AlInGaAs single quantum well lasers using a growth parameters optimization technique
1996 Edition, January 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A very low 82.5 A/cm/sup 2/ pulsed threshold current density was achieved for a quaternary AlInGaAs single quantum well laser, using a novel growth parameter optimization process employing a...

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