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Variation of lateral doping—A new concept to avoid high voltage breakdown of planar junctions
1985 Edition, January 1, 1985 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper a new concept for high voltage planar junctions is presented. The necessary widening of the space charge region at the end of the junction is obtained by implantation through small openings in the oxide mask and...

A Novel Variation of Lateral Doping Technique in SOI LDMOS With Circular Layout
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The breakdown characteristics of a practical silicon-on-insulator (SOI) lateral power device are generally limited by the 3-D curvature effect induced by its circular layout. The Conventional 2-D design methods such as 2-D variation of lateral...

A Novel Variation of Lateral Doping Technique in SOI LDMOS With Circular Layout
2018 Edition, Volume 65, April 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The breakdown characteristics of a practical silicon-on-insulator (SOI) lateral power device are generally limited by the 3-D curvature effect induced by its circular layout. The Conventional 2-D design methods such as 2-D variation of lateral...

Variation of lateral doping as a field terminator for high-voltage power devices
1986 Edition, Volume 33, March 1, 1986 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this brief a new concept for high-voltage planar junctions is presented. The necessary widening of the space-charge region at the junction surface is obtained by implantation through small openings in the oxide mask and subsequent...

A New Low Turn-off Loss SOI Lateral Insulated Gate Bipolar Transistor with Buried Variation of Lateral Doping Layer
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, we propose a new low turn-off loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with buried variation of lateral doping (VLD) layer. The proposed device features a VLD layer inserted in the drift...

Impact of lateral doping profiles on ultra-scaled Trigate FinFETs
2014 Edition, June 1, 2014 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The implementation of lateral doping profiles on quantum transport simulations of ultra-scaled transistors will affect their electrical characteristics. This work presents a systematic study of the impact of lateral doping profiles when...

High voltage SJ-pLDMOS with Variation Lateral Doping drift layer
2010 Edition, July 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper reports a novel Super Junction pLDMOS (SJ-pLDMOS) with charge-balanced SJ region at the surface of Variation Lateral Doping (VLD) drift region. SJ region provides a low on-resistance path in the ON-state and keeps charge balance...

Charge model for SOI LDMOST with lateral doping gradient
2001 Edition, January 1, 2001 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper we present a compact physically based charge model, which describes accurately the unique features of the SOI LDMOS. The model uses a modified Ward and Dutton partitioning scheme to account for the lateral doping gradient in the channel region...

A New Method to Determine Effective Lateral Doping Abruptness and Spreading-Resistance Components in Nanoscale MOSFETs
2008 Edition, Volume 55, April 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A comprehensive technique for the accurate extraction of the effective lateral doping abruptness and the spreading-resistance components in source/drain extension (EXT) regions is presented by FET on-resistance characterization and physical resistance modeling. The...

A new concept of a hybrid trapped field magnet
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents a new concept for a hybrid trapped field magnet made of second generation high-temperature super-conducting (2G HTS) ring-shape magnet and HTS stack tapes. This hybrid trapped field magnet has the potential to pro-vide a...

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