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Uniform growth of 10-μm-core double-clad Cr4+:YAG crystal fiber
2007 Edition, May 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An auxiliary sapphire tube serving as a heat capacitor was used in the co-drawing laser-heated pedestal growth system for fabricating small core crystal fibers. A factor of 3 improvement was achieved. Uniform 10-μm-core...

Uniform growth of 10-μm-core double-clad Cr4+:YAG crystal fiber
2007 Edition, May 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An auxiliary sapphire tube serving as a heat capacitor was used in the co-drawing laser-heated pedestal growth system for fabricating small core crystal fibers. A factor of 3 improvement was achieved. Uniform 10-μm-core...

Close-spaced MOCVD reactor for 1%-uniformity growth of In-containing materials on 4" substrates
1994 Edition, January 1, 1994 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We have designed, built, and characterized a reactor for highly uniform, abrupt-interface growth of InP and other materials onto 4"-diameter substrates. The reaction chamber features a water-cooled "showerhead"-type distributed injection scheme located in close proximity...

Uniform growth of a-Si / μc-Si Tandem junction solar cells over 5.7m2 substrates
2009 Edition, June 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The cost of photovoltaic (PV) energy generation has been steadily reduced with the increase of solar cell power conversion efficiency and the drop of manufacturing cost. An effective way of lowering the cost of Si thin film solar cells is to increase the solar...

Uniform Growth of InSb on GaAs in a Rotating Disk Reactor by LPMOVPE
1992 Edition, January 1, 1992 - IEEE - Institute of Electrical and Electronics Engineers, Inc.
A description is not available for this item.
Super-wideband amplified spontaneous emission generated by double-clad Cr/sup 4+/:YAG crystal fiber
2004 Edition, Volume 1, January 1, 2004 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Double-clad Cr/sup 4+/:YAG crystal fiber is demonstrated by a co-drawing laser-heated pedestal growth method. Up to 913 /spl mu/m of super-wideband amplified spontaneous emission was generated at the optical fiber...

Uniform MBE growth of N-AlInAs/InGaAs heterostructures on 3-inch InP substrates and HEMT fabrication
1991 Edition, January 1, 1991 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

It is shown that extremely uniform epitaxial growth of AlInAs/InGaAs selectively doped heterostructures can be achieved on 3-in InP substrates using an In-solder-free holder. The variation in the electron mobility and sheet electron density over a 3-in wafer is within +or-1%....

Highly Uniform RTP Growth and Characterisation of Ultra-Thin Oxynitride Dielectrics Grown in N 2 O
1994 Edition, September 1, 1994 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper describes methods of improving thickness uniformity for ultra-thin oxynitride dielectrics fabricated using nitrous oxide (N 2 O). In addition the electrical characterisation of these dielectrics is presented in order to ascertain the effect that the different...

Simultaneous thickness and compositional uniformity in selective MOVPE growth
1995 Edition, January 1, 1995 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We investigated the feasibility of thickness and compositional uniformity in selective MOVPE growth. Using a modified mask pattern with an additional open window in the rectangular mask area, we succeeded in making uniform the thickness distributions of InGaAs...

An Approach for Versatile Highly-Uniform Movpe Growth - the Flow Controlled Stagnation Point Flow Reactor
1992 Edition, January 1, 1992 - IEEE - Institute of Electrical and Electronics Engineers, Inc.
A description is not available for this item.
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