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TiN-mediated multi-level negative photoconductance of the ZrO<sub>2sub> breakdown path
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present new evidence that the non-volatile negative photoconductivity (NPC) response of the ZrO2 breakdown path can be suppressed or tuned to different levels by repeated application of a positive voltage-bias on the TiN...

TiN-Mediated Multi-Level Negative Photoconductance of the ZrO2 Breakdown Path
2017 Edition, Volume 5, May 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present new evidence that the non-volatile negative photoconductivity (NPC) response of the ZrO2 breakdown path can be suppressed or tuned to different levels by repeated application of a positive voltage-bias on the TiN...

Temperature effect on the reliability of ZrO/sub 2/ gate dielectric deposited directly on silicon
2000 Edition, January 1, 2000 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Temperature effect on the reliability of ZrO/sub 2/ gate dielectric has been presented. High effective voltage-ramp breakdown field was observed. The activation energy of temperature accelerated voltage-ramp breakdown calculated from...

Towards understanding degradation and breakdown of SiO2/high-k stacks
2002 Edition, January 1, 2002 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

To investigate the electrical properties and the reliability of high-k stacks, the leakage current and the time-dependent-dielectric-breakdown (TDDB) of SiO/sub 2//ZrO/sub 2/ double layers over a large thickness...

Comparison between ultra-thin ZrO/sub 2/ and ZrO/sub x/N/sub y/ gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices
2002 Edition, January 1, 2002 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Both NMOSCAP and self-aligned NMOSFET devices using TaN gates were fabricated and characterized in order to compare ZrO/sub 2/ and nitrogen-incorporated ZrO/sub 2/ (ZrO/sub x/N/sub y/) gate dielectrics (EOT/spl sim/10.3/spl Aring/)....

Stress polarity dependence of degradation and breakdown of SiO/sub 2//high-k stacks
2003 Edition, January 1, 2003 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, we summarize our findings on two material systems: SiO/sub 2//Al/sub 2/O/sub 3/ and SiO/sub 2//ZrO/sub 2/. Relatively thick high-k layers are used to avoid defect related problems and to assess the bulk...

Local flux on breakdown of ferroelectric relaxor ceramics
1991 Edition, January 1, 1991 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The effect of local fluxed spots on the breakdown process of ferroelectric relaxor ceramics is investigated. The conducting local fluxed passage-channel can result from lower melting fluxing agents at higher local temperature resulting from accumulating...

Low Weibull slope of breakdown distributions in high-k layers
2002 Edition, Volume 23, April 1, 2002 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The reliability of various Al/sub 2/O/sub 3/, ZrO/sub 2/ and Al/sub 2/O/sub 3//ZrO/sub 2/ double layers with a physical oxide thickness from 3 nm to 15 nm and TiN gate electrodes was studied by...

A comprehensive model for breakdown mechanism in HfO/sub 2/ high-k gate stacks
2004 Edition, January 1, 2004 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Based on physical analysis results, a model describing the breakdown (BD) mechanism of HfO/sub 2//polysilicon gate stack is proposed. Due to the high mechanical strength and the polycrystalline nature of annealed HfO/sub 2/...

Er/sub 2/O/sub 3/-ZrO/sub 2/ insulation coatings on Ag/AgMg sheathed Bi-2212 superconducting tapes by sol-gel process
2003 Edition, Volume 13, June 1, 2003 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We have fabricated high temperature insulation coatings on long-length superconducting tapes and wires using a reel-to-reel sol-gel dip coating system for HTS/LTS coils at NHMFL. In this work, 8 mol% Er/sub 2/O/sub 3/-ZrO/sub 2/ coatings were deposited on...

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