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MgO/GaSe0.5S0.5 Heterojunction as Photodiodes and Microwave Resonators
2016 Edition, Volume 16, February 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, a multifunctional operating optoelectronic device that suits visible light (VLC) and microwave communication systems is designed and characterized. The device which is composed of p-type MgO and n-type GaSe0.5S0.5 heterojunction is characterized by...

Broadband Microwave Frequency Meter
1956 Edition, Volume 44, February 1, 1956 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An electronically tunable frequency meter is described for rapidly determining frequency over a wide range. The device depends on paramagnetic resonance in α, α-diphenyl β-picryl hydrazyl. It consists of a two-inch section of coaxial transmission line filled with...

MWAVE2: A tool for microwave amplifier design
1993 Edition, September 1, 1993 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

MWAVE2 is an educational tool for computer aided design of linear microwave ampliflers which covers all the topics involved in the design, from transistor selection to the synthesis of the microstrip circuit layout. A new method has been developed for...

Development of a Wireless Monitoring System for Microwave-Based Comprehensive Vital Sign Measurement
2016 Edition, Volume 15, January 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A wireless microwave-based antenna monitoring system has been developed for measurement of comprehensive vital signs. The system employs a unique electromagnetic energy coupling sensor/antenna and is also equipped with a mobile app to display the...

A self-attenuating superconducting transmission line for use as a microwave power limiter
2003 Edition, Volume 13, June 1, 2003 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We have designed, fabricated, and tested microwave power limiter based on high-temperature superconductor thin-film technology. The power limiter takes the form of a 50 /spl Omega/ coplanar waveguide transmission line that is reversibly driven from the low-loss...

Microwave Beam Position Monitors at SLAC
1967 Edition, Volume 14, June 1, 1967 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The design and performance of three types of nonintercepting microwave beam position monitors are described. The monitors locate the transverse centroid of the bunched beam. Monitors of the first two types each consist of two orthogonal position-sensing...

Displacement-tolerant Printed Spiral Resonator with Capacitive Compensated-plates for Non-radiative Wireless Energy Transfer
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A printed spiral resonator without external lumped elements is proposed. Instead of employing surface-mount device (SMD) capacitors, series-parallel capacitive plates are designed and etched on the same substrate to achieve simultaneous conjugate matching between a pair...

Physical properties of (Ba,Sr)TiO/sub 3/ thin films used for integrated capacitors in microwave applications
2000 Edition, Volume 1, January 1, 2000 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Recently, there has been significant interest in use of (Ba, Sr)TiO/sub 3/ (BST) thin films for tunable high frequency (RF and microwave) components. In this paper we discuss the electrical properties of BST thin films gown by metalorganic chemical vapor deposition (MOCVD) as a...

Modeling of complicated microwave devices by RFS code
2012 Edition, September 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A computer code RFS (Radio Frequency Simulator) is described. The code is based on vector finite element method and designated for analysis and optimization of complicated microwave devises and structures. The code RFS has advanced graphical user interface for creation,...

Linearity characteristics of microwave-power GaN HEMTs
2003 Edition, Volume 51, February 1, 2003 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The RF linearity of a 9-mm 10-W GaN high electron-mobility transistor (HEMT) grown on a 100-mm silicon substrate is presented. The quantitative results display promising device linearity as measured by intermodulation distortion and adjacent channel power...

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