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Terahertz emission from InAs and InSb under a 1.55 µm Laser Excitation
2010 Edition, September 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Terahertz (THz) emission from a 1.55 µm laser excitation on InAs and InSb was investigated. InAs showed a much higher emission as compared to InSb that differs from earlier reports....

Thickness dependence of intense terahertz emission from InAs thin films
2010 Edition, September 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A systematic study of the intense terahertz (THz) emission from InAs thin films grown on a GaAs substrate was performed by varying the V/III ratio of the InAs. The emission intensity increased as the film thickness increased up to 1...

Enhanced Terahertz Emission from InAs Quantum Dots on GaAs
2006 Edition, September 1, 2006 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Optically pumped THz emission has been observed in a wide range of semiconductors, and this process is an important practical source of pulsed THz radiation for time-domain THz spectroscopy and THz imaging. We show that InAs quantum dots on GaAs can be used to...

Terahertz emission from (100)p-InAs
2005 Edition, Volume 1, January 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Terahertz emission from (100) p-type InAs illuminated by ultrafast near-infrared pulses is investigated. A two-fold rotational symmetry was observed when rotated about the surface normal. A quadratic relationship was found for the emission dependence...

Enhanced terahertz pulses emission from inas surface by femtosecond laser pulses with tilted intensity front
2008 Edition, May 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

It is shown that using femtosecond laser pulses with tilted intensity front allows controlling the direction of terahertz emission from InAs surface and by that way achieving significant increase in the generated power.

Enhanced terahertz emission from GaAs in MBE-grown InAs/GaAs quantum dot structures
2009 Edition, September 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report on intense terahertz emission from InAs/GaAs quantum dot layers grown by molecular beam epitaxy. The emission is attributed to absorption in the GaAs layer and a strong enhancement was observed from the quantum dot samples.

Intense terahertz emission from GaAs and InAs thin films grown on GaSb substrates
2011 Edition, August 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report on the terahertz (THz) emission from n-GaAs/p-GaSb and /p-InAs/n-GaSb structures using a 1.55 μm femtosecond laser excitation. The effect of the n-GaAs thin film on a p-GaSb substrate is investigated. Significant THz...

Study of THz radiation from InAs and InSb surfaces under high magnetic fields
2002 Edition, January 1, 2002 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The magnetic field dependence of the THz radiation from InAs and InSb surfaces is studied up to 5 tesla. The intensity and spectra for horizontally and vertically polarized components of the THz radiation shows characteristic changes with magnetic field...

Terahertz emission spectroscopy of InAs nanowires
2013 Edition, September 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We measured terahertz (THz) emission from the vertically aligned indium arsenide (InAs) nanowires using THz time-domain spectroscopy. The photoexcited InAs nanowires were grown by metalorganic chemical vapor deposition on type <;111> silicon substrate....

Nonlinear properties of electron gas in n-InSb and graphene in THz range under finite temperatures
2017 Edition, April 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The nonlinear properties in THz range of 3D electron gas in narrow-gap n-InSb semiconductor and 2D one in graphene are investigated theoretically. The nonlinear dependencies of the density of electric current on the applied electric field have been computed from the kinetic...

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