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Technological Critical Points of InGaAsP/InP 1.3 μm Lasers as Evidence of 12000 Hour CW Operating Life Tests
1987 Edition, September 1, 1987 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Electro-optical characteristics evolution of InGaAsP/InP lasers after 12000 hrs life tests with respect to their technological - crystallographic critical points is analyzed. In particular it was found the Indium die-attach is...

Directional emission InGaAsP/InP mirocylinder lasers
2010 Edition, January 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Electrically injected InGaAsP/InP microcylinder lasers connected to an output waveguide are fabricated. Observed mode jump versus temperature with an interval of two times of longitudinal mode interval is agreement with that predicted by mode coupling.

Integrated MQW intermixed InGaAsP/InP waveguide photodiodes
2008 Edition, October 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

InGaAsP/InP multi quantum well impurity intermixed waveguide photodiodes suitable for CWDM wavelength range is presented which has a transit time limited bandwidth of 86 GHz with maximum efficiency of 22% and insertion loss of 0.4-23 dB.

InGaAsP/InP phototransistor-based detectors
1983 Edition, Volume 30, April 1, 1983 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Two kinds of phototransistors-a Schottky Collector Phototransistor (SCPT) and a Photo-Darlington Transistor (PDT), which should prove useful for switching and high current application, respectively-have been fabricated from InGaAsP/InP wafers grown by LPE. The SCPT exhibited...

A temperature insensitive InGaAsP-InP optical filter
1996 Edition, Volume 8, November 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A temperature insensitive optical filter (TIOF) with InGaAsP-InP material system is proposed. Less than 0.1 /spl Aring///spl deg/C temperature dependence is achieved for the first time even though we used the InGaAsP-InP material system. By changing the optimum structure...

Vertically integrated InGaAsP/InP microstack lasers
2004 Edition, Volume 1, January 1, 2004 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

High power vertically integrated 1.59 /spl mu/m wavelength InGaAsP/InP microstack lasers with three identical optically decoupled emitters series-connected through low resistance tunnel junctions have been realized by MOCVD growth for the first time.

Investigation of material gain of InGaAs/InGaAsP/InP lasing heterostructure
2016 Edition, January 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, we have studied a step index separate confinement heterostructure (SCH) based InGaAs/InGaAsP/InP lasing heterostructure on InP substrate consisting of single quantum well (SQW) and investigated material gain theoretically within TE and TM polarization...

InGaAsP-InP dual-wavelength bipolar cascade lasers
2006 Edition, Volume 18, August 1, 2006 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report the demonstration of an InGaAsP-InP-based dual-wavelength bipolar cascade laser. Simultaneous dual-wavelength (1350 and 1450 nm) output at room temperature using pulsed excitation is achieved by epitaxially connecting two different active regions with a low...

Programmable Photonic Lattice Filters in InGaAsPInP
2010 Edition, Volume 22, January 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A novel monolithic programmable optical lattice filter consisting of unit cell building blocks is proposed. Single unit cells incorporating a ring resonator in one arm of a Mach-Zehnder are fabricated in an InGaAsP-InP material system. Programmable poles and zeros are...

Slanted-rib waveguide InGaAsP-InP polarization converters
2004 Edition, Volume 22, May 1, 2004 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We summarize experimental and theoretical results for a compact (330 /spl mu/m), low-loss on-chip InGaAsP-InP polarization converter. The converter, which contains a single asymmetric rib waveguide segment, exhibits a measured conversion efficiency of -16 dB and a response...

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