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Self-Heating Characterization of β-GaOThin-Channel MOSFETs by Pulsed I-V and Raman Nanothermography
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

β -GaOthin-channel MOSFETs were evaluated using both dc and pulsed I-V measurements. The reported pulsed I-V technique was used to study self-heating effects in the MOSFET...

Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ – ${V}$ and Raman Nanothermography
2020 Edition, Volume 67, January 1, 2020 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

$\beta $ -Ga2O3 thin-channel MOSFETs were evaluated using both dc and pulsed ${I}$ - ${V}$ measurements. The reported pulsed ${I}$ - ${V}$ technique was used to study self-heating effects in the MOSFET...

A Performance Comparison Between β -GaOand GaN HEMTs
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report on the quantitative estimates of various metrics of performance for β-GaO₃-based high electron mobility transistors (HEMTs) for RF and power applications and compare them with III-nitride devices. Device parameters such as electron...

Ternary Alloy Rare-Earth Scandate as Dielectric for β-GaO₃ MOS Structures
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A ternary alloy rare-earth scandate, (Y0.6Sc0.4)₂O₃, is demonstrated as a high-k dielectric insulator for β -GaO₃ MOS devices. (Y0.6Sc0.4)₂O₃/β -GaO₃ (010) MOS capacitors were fabricated and characterized using capacitance-voltage...

Fast Recovery Performance of β-Ga 2 O 3 Trench MOS Schottky Barrier Diodes
2018 Edition, June 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Gallium oxide (Ga 2 O 3 ) is promising next-generation semiconductor material for high power and low loss devices. Its wide band gap of 4.5-4.9 eV results in a high breakdown field of $\sim 8\ \mathrm{MV}/\mathrm{cm}$ and Baliga's FOM of $\sim 3400$ ...

High Breakdown Voltage (-201) β-Ga $_{2}$ O $_{3}$ Schottky Rectifiers
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

β-Ga $_{2}$ O $_{3}$ Schottky barrier diodes were fabricated in a vertical geometry structure consisting of Ni/Au rectifying contacts without edge termination on Si-doped epitaxial layers (10 μm, n~ 4x10 $^{15}$ cm $^{-3}$ ) on Sn-doped bulk Ga $_{2}$ O...

Electrothermal Characteristics of Delta-Doped β -GaO₃ Metal-Semiconductor Field-Effect Transistors
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 2-D electrothermal model of delta-doped b eta-gallium oxide (β -GaO₃) metal-semiconductor field-effect transistor (MESFET) is developed by using TCAD Sentaurus to investigate its electrical and thermal characteristics. The temperature and electric...

Self-Heating Characterization and Thermal Resistance Modeling in Multitube CNTFETs
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The thermal resistance, thermal capacitance, and thermal time constant have been experimentally extracted for the first time for a multi-tube multi-finger carbon nanotube FET (CNTFET) from trap-free high-frequency characteristics by following a methodology based on...

Thermal conductivity measurement of diamond and β-Ga 2 O 3 thin films by a 3ω method
2018 Edition, April 1, 2018 - Japan Institute of Electronics Packaging

Ga 2 O 3 , is one of the promising candidates as wide bandgap material, having potential advantage over SiC and GaN. The low thermal conductivity of Ga 2 O 3 is a major drawback, however, there are not much reports for thermal conductivity...

Self-Heating Characterization and Thermal Resistance Modeling in Multitube CNTFETs
2019 Edition, Volume 66, November 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The thermal resistance, thermal capacitance, and thermal time constant have been experimentally extracted for the first time for a multi-tube multi-finger carbon nanotube FET (CNTFET) from trap-free high-frequency characteristics by following a methodology based on...

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