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Scattering of carries in δ-doped by Mn InGaAs quantum well with hole-mediated ferromagnetism
2008 Edition, July 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Thermodynamic, transport and magnetotransport properties of free charge carriers in the diluted magnetic semiconductor with a quantum well (QW) GaAs/InGaAs/GaAs delta-doped by C and Mn are investigated. For definition of...

Optical absorption by E + miniband of GaAs:N δ-doped superlattices
2013 Edition, June 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The optical properties of GaAs:N δ-doped superlattices (SLs) are investigated by photoreflectance (PR), photo luminescence (PL) and photoluminescence excitation (PLE) spectroscopy. A direct evidence of the optical absorption due to an E+ related band of a...

High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si δ -Doped AlGaN/GaN:C HEMTs
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper reports the AlGaN/GaN/ Si δ -doped AlGaN/GaN:C HEMT device on silicon with high channel conductivity, high breakdown field (E-field) strength, and low current collapse by using the Si-doped AlGaN back barriers. The Si δ -doped AlGaN back...

Small Signal Microwave Characteristics and Optimization of δ-doped layer positioning in submicron InGaAs HEMT
2019 Edition, July 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

InGaAs HEMTs are extensively utilized for high frequency applications due to unique material and structural properties. In this paper the effect of silicon delta (δ) doping layer position in a recessed depth AlGaAs/InGaAs psuedomorphic High Electron...

An improved InP/InGaAs pnp HBT with δ-doped sheet between emitter-base junction
2006 Edition, December 1, 2006 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The characteristics and device mechanism of InP/InGaAs pnp δ-doped heterojunction bipolar transistor are demonstrated. The additions of a δ-doped sheet and two spacer layers efficiently eliminate the potential spike at emitter-base junction, lower...

P-type δ-doping of highly-strained VCSELs for 25 Gbps operation
2012 Edition, September 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present the utilization of δ-doping to mitigate the rise in nonlinear gain compression in highly-strained InGaAs VCSELs and compare it with unstrained and undoped active region designs. High-speed 25 Gbps operation is also demonstrated.

Electron spectrum of δ-doped quantum wells by Thomas — Fermi method at finite temperatures
2010 Edition, May 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Electron spectrum of δ-doped quantum well in n-GaAs is investigated by means of Thomas - Fermi (TF) method at finite temperatures. This method shows fast convergence and good accuracy. At 2D doping 1013…2×1013 cm−2, the simplest TF...

Analysis of the energy structure of nitrogen δ-doped GaAs superlattices for high efficiency intermediate band solar cells
2012 Edition, June 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Nitrogen δ-doped GaAs superlattices were fabricated and their energy structures were investigated. Several transitions related to E + band of nitrogen δ-doped regions were observed in photoreflectance (PR) spectra at energies ranging 1.5-1.7 eV for the...

Combined method for simulating electron spectrum of δ-doped quantum wells in n-Si
2012 Edition, May 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The combined method to investigate the electron spectrum of single n-type δ-doped quantum wells in silicon is proposed. It is based on computing the electron potential energy by means of the Thomas-Fermi method at finite temperatures; then the...

Low ohmic-contact resistance in recessed-gate normally-off AlGaN/GaN MIS-HEMT with δ-doped GaN Cap Layer
2015 Edition, June 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Summary form only given. In this paper, we discuss an ohmic contact resistance (Rc) in a recessed-gate normally-off AlGaN/GaN MIS-HEMT with a δ-doped GaN Cap Layer. This structure ensures high uniformity of a threshold voltage (Vth) by a selective...

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