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Rapid sub-wavelength texturing for IIIGÇôV solar cells by laser interference lithography and wet etching
2015 Edition, June 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Optimization of non-planar antireflective coating and back- or front- surface texturing are widely studied to further reduce the reflection losses and increase the sunlight absorption path in solar cells.. Back reflectors have been developed from perfect mirror to...

Radiation effects on luminescent coupling in IIIGÇôV solar cells
2015 Edition, June 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Advances in the architecture of GaInP solar cells have recently lead to ~21% conversion efficiencies under the global spectrum due to high radiative efficiencies, and the resulting strong luminescent coupling in GaInP/GaAs tandems has lead to record dual-junction efficiencies....

Improved voltage response in IIIGÇôV solar cells based on engineered spontaneous emission
2015 Edition, June 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In order to obtain a high photovoltaic (PV) efficiency, a solar cell must operate at both a high current and voltage. The current is determined by the semiconductor's ability to convert above-bandgap photons into electron-hole pairs that can be collected, while the...

High separation rate of epitaxial lift-off using hydrophilic solvent for IIIGÇôV solar cell and reusable applications
2015 Edition, June 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Through the epitaxial lift-off (ELO) process using the HF solutions mixed with hydrophilic substances consisting of acetone (ACE), isopropanol (IPA), and methanol (MA), the separation rate for the GaAs substrate and the III-V solar cell can be improved...

Indium Gallium Antimonide a better bottom subcell layer in IIIGÇôV multijunction solar cells
2015 Edition, June 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An approach to modeling of III-V multijunction solar cell utilizing InGaSb as the bottom subcell layer and altering the band gaps of InGaP and InGaAs, a novel triple junction, has been presented which executes the ability to capture photons for wider range of the...

Indium zinc oxide mediated wafer bonding for IIIGÇôV/Si tandem solar cells
2015 Edition, June 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Silicon-based tandem solar cells are desirable as a high efficiency, economically viable approach to one sun or low concentration photovoltaics. We present an approach to wafer bonded III-V/Si solar cells using amorphous indium zinc oxide (IZO) as an interlayer. We...

High-performance metamorphic tunnel junctions for IIIGÇôV/Si multijunction solar cells
2015 Edition, June 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Various metamorphic tunnel junction designs, targeted for application toward Ga0.56In0.44P/GaAs0.9P0.1/Si triple-junction and GaAs0.75P0.25/Si dual-junction solar cells, grown via both molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition...

Towards a monolithic, substrate-reusable and an all-epitaxial design for IIIGÇôV-on-Si solar cells
2015 Edition, June 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Integration of III-V multijunction solar cells on Si substrate can address the future levelized cost of energy by unifying the high-efficiency merits of III-V materials with the low-cost and abundance of Si. A Si-compatible monolithically integrated 3J InGaP/GaAs/Ge-Si...

Optical and electrical analysis of graded buffer layers in IIIGÇôV/SiGe on silicon tandem solar cells
2015 Edition, June 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A graded buffer layer is needed in order to grow III-V/SiGe on silicon substrate because of the lattice mismatch. In this work, optical absorption in the graded buffer layer is quantified by measuring the transmittances. We demonstrate a 7 μm graded buffer layer with Ge composition from 0%...

Fabrication of Three-Dimensional Si-Au Hierarchical Nanostructures by Laser Interference Lithography
2018 Edition, August 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper reports a method for the fabrication of 3D Si-Au hierarchical nanostructures to improve the optical performances through four-beam laser interference lithography (LIL) and inductively coupled plasma (ICP) etching. The 3D Si-Au hierarchical...

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