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Prospects of α-Sic and β-Sic based P+P N N+ IMPATT devices as sub-millimeter wave high-power sources
2008 Edition, November 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Wide-Band-Gap (WBG) alpha (4H and 6H)-SiC and beta(3C)-SiC based double drift region (DDR, p+p n n+ type), IMPATT devices are designed at sub-millimeter wave (Terahertz) region and their...

Radiation hardness of minimum ionizing particle detectors based on SiC p/sup +/n junctions
2005 Edition, Volume 1, January 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this work we analyzed the radiation hardness of SiC p/sup +//n diodes used as minimum ionizing particle (MIP) detectors after very high 1 MeV neutron fluences. The diode structure is based on ion implanted p/sup +/ emitter in...

A High-voltage “Quasi-p-LDMOS” using Electrons as Carriers in Drift Region Applied for SPIC
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A new type of "quasi-p-LDMOS", in which electrons are used as conductive carriers in the drift region is proposed. A floating electrode F is used in the "quasi-p-LDMOS" to transform the hole current into electron current. Then, by using an integrated low-voltage...

Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup +/n junctions
2006 Edition, Volume 53, June 1, 2006 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this work we analyzed the radiation hardness of SiC p/sup +/ n diodes used as minimum ionizing particle (MIP) detectors after very high 1 MeV neutron fluences. The diode structure is based on ion implanted p/sup +/ emitter in...

GaAs p+-n+-i(υ)-n+ Tunnett Diode
1980 Edition, September 1, 1980 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The Tunnett (tunnel injection lransit lime) diode has been evaluated to be useful device in the frequency range from 100 to 1000 GHz following SIT till 100 GHz. The higher oscillation frequency with lower bias voltage and lower noise level of the Tunnett diode will be superior...

High temperature performance of NMOS integrated inverters and ring oscillators in 6H-SiC
2000 Edition, Volume 47, April 1, 2000 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Electrical characterization up to 573 K is performed on integrated inverters with different beta ratios and 17-stage ring oscillators based on SiC NMOS technology. These devices are fabricated on a p-type 6H-SiC epitaxial layer with a doping concentration...

Power generation of millimeter-wave SiC avalanche transit time oscillator at high temperature
1997 Edition, Volume 2, January 1, 1997 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

For the first time, millimeter-wave SiC (Silicon Carbide) IMPATT oscillator was analyzed at 500 K and 800 K with temperature dependent ionization rates and saturation velocity. The large signal simulations demonstrate the fact that SiC IMPATT...

High threshold uniformity, millimeter-wave p/sup +/-GaInAs/n-AlInAs/GaInAs JHEMTs
1995 Edition, Volume 16, December 1, 1995 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

High threshold voltage uniformity p/sup +/-GaInAs/n-AlInAs/GaInAs millimeter-wave junction-modulated HEMT's are reported. Devices with 0.2 /spl mu/m gatelength exhibit a standard deviation in threshold voltage of 13.7 mV across a 1/spl times/1...

High-performance n/sup +/-GaAs/p/sup +/-In/sub 0.49/Ga/sub 0.51/P/n-GaAs high-barrier gate heterostructure field-effect transistor
2000 Edition, January 1, 2000 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A new heterostructure field-effect transistor (HFET) using an n/sup +/-GaAs/p/sup +/-In/sub 0.49/Ga/sub 0.51/P/n-GaAs high-barrier-gate structure has been fabricated successfully and demonstrated. The heavily doped...

Surface charge behaviors of SiR/SiC composites with nonlinear conductivity
2017 Edition, May 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

High temperature vulcanized (HTV) silicone rubber (SiR) is widely used as HVDC cable accessory insulation considering its outstanding electrical properties along with elasticity and thermal resistance. However surface charge caused by corona would accumulate on SiR surface...

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