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Photon coupling mechanism in 1.3-μm quantum-dot lasers
2007 Edition, May 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A room-temperature negative characteristic temperature is demonstrated for a p-type modulation doped 1.3-μm quantum dot laser. A photon coupling mechanism is purposed to explain the temperature-dependent Jth for both p-doped and un-doped QD...

Photon Coupling Mechanism in 1.3-μm Quantum-Dot Lasers
2007 Edition, May 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A room-temperature negative characteristic temperature is demonstrated for a p-type modulation doped 1.3-mum quantum dot laser. A photon coupling mechanism is purposed to explain the temperature-dependent Jth for both p-doped and un-doped QD lasers.

1.3 μm quantum-dot laser linewidth rebroadening
2006 Edition, May 1, 2006 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The linewidth enhancement factor of a quantum-dot laser is observed to increase substantially at high bias currents. This is explained as a consequence of slow carrier relaxation and plasma dependent refractive index.

Low-threshold oxide-confined 1.3-μm quantum-dot laser
2000 Edition, Volume 12, March 1, 2000 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Data are presented on low threshold, 1.3-μm oxide-confined InGaAs-GaAs quantum dot lasers. A very low continuous-wave threshold current of 1.2 mA with a threshold current density of 28 A/cm2 is achieved with p-up mounting at room temperature. For slightly larger devices...

1.3-μm Quantum-dot lasers integrated with spot-size converter for improved coupling efficiency to waveguide
2015 Edition, August 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

1.3-μm quantum-dot lasers integrated with a thickness tapered waveguide as a spot-size converter have been developed to improve coupling efficiency to silicon photonics devices. Improvements of far-field patterns and coupling efficiency were experimentally...

Temperature Dependence of Gain Characteristics in P-Doped 1.3-μm Quantum Dot Lasers
2007 Edition, May 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report the measured temperature dependence of gain characteristics in p-doped 1.3-μm quantum-dot lasers and indicate the relationship between their temperature-stability around room temperature and behavior of holes at the ground-state supplied by p-doping.

Improved temperature performance of 1.31-μm quantum dot lasers by optimized ridge waveguide design
2005 Edition, Volume 17, September 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We demonstrate the importance of the fabricated device structure for the external differential efficiency, threshold current density, and maximum operating temperature for ground state operation of a 1.31-μm quantum dot laser. The introduction of a shallow ridge etch...

Small-signal modulation characteristics of p-doped 1.1- and 1.3-μm quantum-dot lasers
2005 Edition, Volume 17, November 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We have investigated the small-signal modulation characteristics of 1.1and 1.3-μm p-doped quantum-dot lasers in order to evaluate the potential of acceptor doping. The maximum measured 3-dB bandwidth of the 1.1- and 1.3-μm lasers are 11 and 8...

High-temperature operating 1.3-μm quantum-dot lasers for telecommunication applications
2001 Edition, Volume 13, August 1, 2001 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

High-performance 1.3-μm-emitting quantum-dot lasers were fabricated by self-organized growth of InAs dots embedded in GaInAs quantum wells. The influence of the number of quantum-dot layers on the device performance was investigated....

New class of 1.55 μm quantum dot lasers for future high data rate optical communication
2013 Edition, June 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A review will be given on the latest development of highspeed directly modulated 1.55 μm lasers based on high model gain quantum dot material. Static and dynamic properties of short cavity lasers will be presented exhibiting data rates well beyond 20 GBit/s. The...

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