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High performance MOVPE grown quantum cascade lasers
2004 Edition, Volume 1, January 1, 2004 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report MOVPE-grown quantum cascade lasers operating at /spl lambda/ = 9 /spl mu/m. Threshold current densities as low as 840 Acm/sup -2/ at 12 K, and 3.5 kAcm/sup -2/ at room temperature are measured, comparable with state-of-the-art MBE grown devices.

MOVPE-grown 1.5 µm distributed feedback lasers on corrugated InP substrates
1987 Edition, Volume 23, June 1, 1987 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A single-step low-pressure metalorganic vapor phase epitaxy (MOVPE) was applied to the fabrication of 1.5 μm InGaAsP/InP distributed feedback laser diodes on corrugated InP substrates, accompanied by LPE for buried heterostructure...

MOVPE-Grown Ultrasmall Self-Organized InGaN Nanotips
2008 Edition, Volume 7, January 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

It has been demonstrated that self-organized InGaN nanotips can be vertically grown via metal-organic vapor phase epitaxy (MOVPE) and thermal annealing. It was found that typical height of these nanotips is 20 nm with an average width of 1 nm. It was also found that the local...

Surface emission from MBE and MOVPE grown quantum cascade lasers
2005 Edition, Volume 1, January 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report high power single mode surface emission from second order distributed feedback quantum cascade lasers. Two different laser materials are used for the lasers: MOVPE grown InGaAs/InAlAs and MBE grown GaAs/AlGaAs

MOVPE Grown Gallium Phosphide–Silicon Heterojunction Solar Cells
2017 Edition, Volume 7, March 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Gallium phosphide (GaP) is, in theory, a near-ideal heteroemitter for silicon solar cells due to its electronic and crystal properties. In this paper, we present n-type gallium phosphide on p-type silicon heterojunction solar cells which have been prepared by direct growth via metal-organic...

Impact of Sb Incorporation on MOVPE-Grown “Bulk” InGaAs(Sb)N Films for Solar Cell Application
2016 Edition, Volume 6, November 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We have investigated the impacts of Sb incorporation on the microstructural, optical, electrical, and carrier dynamics properties of bulk InGaAsSbN films in a comparative study of InGaAsN and InGaAsSbN materials grown by metal-organic vapor phase epitaxy (MOVPE). These films...

THz Difference-Frequency Generation in MOVPE-Grown Quantum Cascade Lasers
2014 Edition, Volume 26, February 1, 2014 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report mass-producible room-temperature electrically-pumped THz sources based on intra-cavity difference-frequency generation in mid-infrared InGaAs/AlInAs/InP quantum cascade lasers. Devices are grown by a commercial foundry using metal organic vapor phase epitaxy. A...

Native oxides formation on MOVPE grown binary III-V materials — Impact on surface wettability
2014 Edition, May 1, 2014 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The native oxides formation on ambient-stored metalorganic vapour phase epitaxy (MOVPE) grown GaAs, InP and InAs is documented by contact angle measurements and X-ray photoelectron spectroscopy (XPS). The time dependent transitions from hydrophobic to hydrophilic states...

Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET
1992 Edition, September 1, 1992 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The leakage of reverse biased Schottky gates on lattice matched InAIAs/InGaAs HFET grown by MOVPE on s.i. InP subtsrates is adressed. The contribution of (i) (thermionic-) field emission across the Schottky barrier (ii) generation-recombination in the space charge...

Single mode performance and structural quality of MOVPE grown InP based quantum cascade lasers
2005 Edition, January 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report single longitudinal mode, T>300 K operation of MOVPE-grown InGaAs/AlInAs DFB quantum cascade lasers. Structural investigation indicates the epitaxial quality of the active region to be equivalent to high performing MBE grown structures.

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