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Low-threshold epitaxially grown 1.3 μm InAs quantum dot lasers on patterned (001) Si
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A three-fold reduction of threshold current, with a minimum threshold current density of 286 A/cm $^2$ , a maximum operating temperature of 80 °C, and a maximum 3 dB bandwidth of 5.8 GHz was achieved for 1.3 μm InAs quantum dot lasers...

Low-Threshold Epitaxially Grown 1.3- μ m InAs Quantum Dot Lasers on Patterned (001) Si
2019 Edition, Volume 25, November 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A three-fold reduction of threshold current, with a minimum threshold current density of 286 A/cm2, a maximum operating temperature of 80 °C, and a maximum 3-dB bandwidth of 5.8 GHz was achieved for 1.3-μm InAs quantum dot lasers on...

Quantum Dot Lasers Epitaxially Grown on Si
2019 Edition, June 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

InAs quantum dot lasers epitaxially grown on Si show promise for achieving lower cost and higher performance photonic integrated circuits. The discrete density of states inherent to quantum dot lasers reduces their...

Low threshold quantum dot lasers directly grown on unpatterned quasi-nominal (001) Si
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report electrically pumped, continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4°. No GaP, Ge buffer layers or substrate patterning is required....

Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si
2020 Edition, Volume 26, March 1, 2020 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report electrically pumped, continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4°. No GaP, Ge buffer layers or substrate patterning is required....

Triple reduction of threshold current for $1.3 \mu \mathrm{m}$ in as quantum dot lasers on patterned, on-axis (001) Si
2019 Edition, May 1, 2019 - Optical Society (The) (OSA)

Triple reduction of threshold current was achieved for 1.3 μm InAs quantum dot lasers on patterned, on-axis (001)Si. This was enabled by reducing the threading dislocation density, from 7×107 to 3×106cm-2.

InAs/InAlGaAs quantum dot-on-silicon microdisk lasers operating at 1.55 μm
2017 Edition, May 1, 2017 - Optical Society (The) (OSA)

InAs/InAlGaAs quantum dot microdisk lasers were epitaxially grown on Si (001) substrates by MOCVD. CW lasing at 1544 nm was achieved at 4.5 K, with a low threshold of 230 μW and quality factor of 2200.

InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates
2013 Edition, Volume 19, July 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The realization of semiconductor lasers on Si substrates will enable the fabrication of complex optoelectronic circuits. This will permit the creation of the long-dreamed chip-to-chip and system-to-system optical interconnects. This paper reports recent developments in our work...

1-µm InAs quantum dot micro-disk lasers directly grown on exact (001) Si
2016 Edition, September 1, 2016 - Institute of Electronics, Information and Communication Engineers, The (IEIC)

Capitalizing on our novel epitaxial processes, we demonstrate subwavelength micro-disk lasers as small as 1 μm in diameter on exact (001) silicon substrates. Under continuous wave optical pumping at 10 K, low thresholds down to 35 μW...

Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers
2019 Edition, Volume 55, June 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present an extensive analysis of the physical mechanisms responsible for the degradation of 1.3-μm InAs quantum dot lasers epitaxially grown on Si, for application in silicon photonics. For the first time, we characterize the...

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