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Low k/sub 1/ contact hole formation by double L&S formation method with contact hole mask and dipole illumination
2005 Edition, January 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Contact hole (C/H) patterns are one of the pattern types that are difficult to form. The methods to form /spl sim/0.3 k/sub 1/ C/H patterns are investigated. One of the methods proposed is the double L&S formation...

Applying selective liquid-phase deposition instead of reactive ion etching to the contact hole formation of MOSFETs
1999 Edition, January 1, 1999 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Owing to the demand of anisotropic etching, RIE is generally used to etch SiO/sub 2/ to form contact holes. However, because RIE easily causes damage, many inevitable drawbacks induced by plasma must be carefully eliminated. In our previous research we have developed an...

Most efficient alternative as a way of sub-80 nm contact holes and trenches formation
2003 Edition, January 1, 2003 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, we compared three processes to confirm their feasibility and extract the weak and strong aspects of each process. Each process was evaluated with a mask having 1:1 square array and the isolated contact hole patterns of...

Enhanced Hole Injection into Single Layer WSe2
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Electronic devices with light-emitting regions comprised of single layer transition metal dichalcogenides, such as tungsten diselenide (WSe2), are of great interest due to the formation of a direct bandgap at the single layer limit. Furthermore, increasing injected hole current...

Numerical Simulation of Silicon Heterojunction Solar Cells Featuring Metal Oxides as Carrier-Selective Contacts
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The applicability of different high (low) work function contact materials for the formation of alternative passivating and hole (electron) selective contacts is currently re-explored for silicon solar cells. To assist the engineering of those...

Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this article, we report the optimization of ohmic contact formation on AlGaN/GaN on low-resistivity silicon. For achieving this, a strategy of uneven AlGaN/GaN was introduced through patterned etching of the substrate under the contact. Various pattern designs...

A Physical Unclonable Function With Bit Error Rate < 2.3 x 10⁻⁸ Based on Contact Formation Probability Without Error Correction Code
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This article proposes a physical unclonable function (PUF) based on the contact formation probability. The contact here is the interconnect layer between the metal and the silicon in a chip. As the contact is designed smaller than the size given in the design...

0.1 /spl mu/m level contact hole pattern formation with KrF lithography by resolution enhancement lithography assisted by chemical shrink (RELACS)
1998 Edition, January 1, 1998 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We developed a hole shrink process named RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink) that is a robust and low-cost method. This method makes use of crosslinking reaction between the materials coated on the resist pattern,...

Crystalline Silicon Solar Cells With Coannealed Electron- and Hole-Selective SiC $_\text{x}$ Passivating Contacts
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present electron- and hole-selective passivating contacts based on wet-chemically grown interfacial SiO $_\text{x}$ and overlying in-situ doped silicon carbide (SiC $_\text{x}$ ) deposited by plasma-enhanced chemical vapor deposition. After annealing at 850 °C,...

Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon
2020 Edition, Volume 67, March 1, 2020 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this article, we report the optimization of ohmic contact formation on AlGaN/GaN on low-resistivity silicon. For achieving this, a strategy of uneven AlGaN/GaN was introduced through patterned etching of the substrate under the contact. Various pattern designs...

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