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Low K CMOS65 ball grid array 47 μm pitch wire bonding process development
2007 Edition, December 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

With driving interconnect dimensions to ever-smaller sizes, the RC delay becomes the dominant factor to impact IC performance. The RC delay time is controlled by the resistance of the metal lines in the interconnect structure of an IC, and the capacitance between the metal lines. To reduce RC...

Low K CMOS65 Ball Grid Array 40μm Pitch Wire Bonding Process Development
2008 Edition, December 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

IC performance and cost drive interconnect dimensions to shrink to ever-smaller sizes the RC delay becomes the dominant factor to impact IC performance. The RC delay is a function of the product of the total resistance and capacitance of the whole interconnects structure. To reduce RC delay, copper...

BGA 44um Fine Pitch Low K Wire Bonding Process Development
2005 Edition, June 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

With the further shrink of the IC dimension, the low K material has been widely used to replace the traditional SiO2 ILD in order to reduce the interconnect delay, the introduction of low k material into silicon imposed challenges on assembly wire bonding...

Development of a Cu/Low- $k$ Stack Die Fine Pitch Ball Grid Array (FBGA) Package for System in Package Applications
2011 Edition, Volume 1, March 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Consumers' demands have driven the industry toward devices and packages with low cost, high performance, and multiple functions. Stacking two or more chips into one package becomes a popular choice. In this paper, the development of a three-die stack fine pitch ball...

Packaging challenges in low-k silicon with thermally enhanced ball grid array (TE-PBGA)
2010 Edition, December 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

All market segments continue to put cost pressure on semiconductor and packaging suppliers in order to stay competitive. Taking advantage of continuing silicon innovation in fabrication process, silicon area reduction and more device functionalities increase potential die count per wafer and...

18um Pd- copper wire bonding process development
2012 Edition, August 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Copper wire has been popular in these years when facing ever-increasing gold prices. Recently, Pd-coated Cu wire is emerging as an alternative to bonding with bare Cu wire to prevent copper oxidation during the bonding and improve manufacturability. Compared to...

Smart Wire Bonding Processes for Smart Factories
2018 Edition, December 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

More and more semiconductor manufacturers are adopting "smart" technology to improve throughput, yield and factory efficiency. In this paper, we examine how smart technology addresses two big challenges of wire bonding including fine pitch Cu first bond process...

Packaging Approach for Integrating 40/45-nm ELK Devices Into Wire Bond and Flip-Chip Packages
2011 Edition, Volume 1, December 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

There is a rapid transition in the semiconductor packaging industry of devices moving toward 40/45-nm extreme low k (ELK) from the development phase into mainstream semiconductor assembly manufacturing. The drive to achieve adoption without major changes to process and...

Recent Developments in Fine Pitch Wafer-To-Wafer Hybrid Bonding with Copper Interconnect
2019 Edition, October 1, 2019 - SMTA

3D architectures are increasingly making their way into commercial products such as image sensors and 3D memory. While hybrid bonding exists today in wafer-to-wafer (W2W) format in high volume manufacturing, the proliferation of this technology continues to accelerate. A wide range of new...

Advanced wire bonding technology for Ag wire
2015 Edition, December 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

With the introduction and proliferation of Cu wire bonding, the cost of wire bonding packages is greatly reduced compared to traditional Au wire bonding. Wire bonding is still the most popular interconnect technology and the work horse of the...

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