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Large negative resistance in silicon p-i-n diodes at 300°K
1967 Edition, Volume 55, November 1, 1967 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Silicon p-π-n diodes have been fabricated which exhibit large negative resistance at room temperature. The ratio of threshold voltage to minimum voltage is as large as 400. The volt-ampere characteristic above breakdown shows...

Efficient electroluminescence from GaAs diodes at 300° K
1966 Edition, January 1, 1966 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Light emitting GaAs diodes will be described which differ from standard ones insofar as the p-n junction is completely solution regrown and amphoterically doped. The amphoteric dopant Si is the dominant impurity on both sides of the junction giving rise to a highly compensated...

Effect of higher absorption in non-lasing GaAs diodes at 300°K
1966 Edition, Volume 2, April 1, 1966 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The external efficiency of the incoherent radiation in GaAs diodes is decreased typically by a factor of 10 as temperature increases in the 77°-to-300°K range. This paper shows that this decrease may be attributed to increased absorption at...

Modeling, Fabrication, and Characterization of Large Carbon Nanotube Interconnects With Negative Temperature Coefficient of the Resistance
2017 Edition, Volume 7, April 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

One of the most appealing properties of carbon nanotube (CNT) interconnects is the possibility of exhibiting, under certain circumstances, a negative temperature coefficient of the electrical resistance, i.e., a resistance that decreases as temperature increases. In the...

Transient temperature distribution in diode lasers and the time duration of the output pulse at 300°K
1968 Edition, Volume 4, April 1, 1968 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A relatively simple method for obtaining the approximate temperature profile across a GaAs diode laser during a short, rectangular current pulse is described. The method, based on consideration of the thermal diffusion of an initially heated slab parallel to the p-n junction,...

GaAs MMIC large tuning-range active bandpass filter using negative resistance circuit
1997 Edition, January 1, 1997 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A second order large tuning-range bandpass active filter has been developed with GaAs MMIC technique using negative resistance circuits and integrated planar Schottky diodes designed and optimized in theory developed by the authors. The filter has a 200 MHz 3...

Negative Resistance-Based Electronic Impedance Tuner
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An electronic impedance tuner using the negative resistance of tunneling diodes is proposed in this paper. Aside from the fact that it is an interesting solution to synthesize impedance with reflection coefficient larger than one, this scheme is proven to be...

Large-Signal Circuit Theory for Negative-Resistance Diodes, in Particular Tunnel Diodes
1961 Edition, Volume 49, August 1, 1961 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The large-signal, high-frequency circuit applications of a tunnel diode as an oscillator and as a monostable and bistable switch have been analyzed quantitatively, without any of the customary simplifications, by solving on a computer the system of nonlinear differential equations...

Resonant tunneling diodes for feeding antenna-structures for terahertz source applications
2017 Edition, July 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Resonant tunneling diodes (RTDs) have negative differential resistance (NDR) that enables them to produce power at several terahertz (THz). In this paper, an AlAs/GaAs/AlAs RTD is optimized for maximum output power and large negative differential...

Carrier Transport and Thermoelectric Properties of Differently Shaped Germanene (Ge) and Silicene (Si) Nanoribbon Interconnects
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Here, we report a study of carrier transport and thermoelectric properties of silicene/germanene nanoribbon (SiNR/GeNR) interconnects of varying shapes (namely, ``V,'' ``L,'' ``U,'' and ``S'' shaped) with empirical tight binding--nonequilibrium Green's function approach. Our simulation shows that a...

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