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Intracoupled X-band transistor of R&PC «Istok» with power output 14 W
2010 Edition, September 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The intra-coupled transistor of 3 cm wavelength in the metal-and-ceramic case with output power 14 W, gain more than 8 dB and efficiency factor higher than 30 % has been developed. Transistor is designed for continuous and pulse operation. The...

S-Band Transistor Power Amplifier
1971 Edition, Volume 1, August 1, 1971 - IEEE - Institute of Electrical and Electronics Engineers, Inc.
A description is not available for this item.
Wide-band transistor variable attenuators
1965 Edition, Volume 53, May 1, 1965 - IEEE - Institute of Electrical and Electronics Engineers, Inc.
A description is not available for this item.
A Computer Aided Design of L-Band Transistor Power Amplifiers
1974 Edition, Volume 74, January 1, 1974 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A computer aided design procedure is formulated for L-band transistor power amplifiers. The procedure incorporates a precision measurement technique for transistor impedances, a model for large step discontinuities in microstrip and an optimization routine for the direct...

A new low-noise bipolar C-band transistor
1972 Edition, January 1, 1972 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Computer designing techniques and novel processing were used to develop an experimental, high performance microwave transistor which is useful as a low-noise amplifier in both the S-band and the C-band. The transistor, L-216C, is a double diffused, NPN silicon...

Design and performance of C-band transistors
1971 Edition, January 1, 1971 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Recent advances in microwave transistor technology have resulted in significant improvements in the high-frequency performance of small-signal npn bipolar transistors. By suitable choice of collector thickness either f T or f max may be optimized: f T = 15 GHz and f max...

S-band transistor chaotic oscillators on lumped elements
2005 Edition, Volume 1, January 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A system of two coupled 3-point (Colpitts) generators is considered. The coupling circuit used allows to form the spectrum of chaotic signal in required frequency band.

W-band SPST transistor switches
1996 Edition, Volume 6, September 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A single-pole, single-throw (SPST) transistor switch has been developed, Three types of switches, that is, GaAs MESFET, AlGaAs-GaAs HEMT, and pseudomorphic HEMT (PM-HEMT), have been fabricated, and the performances at W-band are compared. To reduce on-state resistance...

1kW GaN S band radar transistor
2013 Edition, October 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper describes a GaN transistor with 1kW output power for S band radar and other applications. This is believed to be the highest power ever reported from a single-ended transistor at this frequency and is a threefold improvement on the...

Impedance mismatching in wide-band transistor amplifier design
1970 Edition, Volume 17, February 1, 1970 - IEEE - Institute of Electrical and Electronics Engineers, Inc.
A description is not available for this item.
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