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Improved breakdown-voltage complementary MOSFET in a 0.18µm standard CMOS process for switch mode power supply (SMPS) applications
2009 Edition, June 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, a novel improved breakdown-voltage (BV) complementary MOSFET for SMPS applications is introduced in a standard 0.18µm VLSI (Very Large Scale Integration) process without any extra...

Novel SiC/Si Heterojunction Power MOSFET With Breakdown Point Transfer Terminal Technology by TCAD Simulation Study
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The novel SiC/Si heterojunction power MOSFET has been advanced to improve the tradeoff between the breakdown voltage (BV) and specific on-resistance (RON,sp). The innovative terminal technology of breakdown point transfer has been applied to SiC/Si...

In0.53Ga0.47As/InP Trench-Gate Power MOSFET Based on Impact Ionization for Improved Performance: Design and Analysis
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A novel In0.53Ga0.47As/InP heterostructure trench-gate power MOSFET employing impact ionization at the hetero junction of n⁻ In0.53Ga0.47As drift region and n⁺InP drain region has been proposed. The impact ionization supports the band-to-band tunneling at heterojunction, which...

A Multi-Loop-Controlled AC-Coupling Supply Modulator With a Mode-Switching CMOS PA in an EER System With Envelope Shaping
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents an ac-coupling supply modulator, consist of a 25-MHz three-level switching amplifier and a wide-bandwidth assisting linear amplifier, and a CMOS power amplifier (PA), in an envelope-elimination-and-restoration system with...

A New Design Technique for Sub-Nanosecond Delay and 200 V/ns Power Supply Slew-Tolerant Floating Voltage Level Shifters for GaN SMPS
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Dual-output gate drivers for switched-mode power supplies require low-side reference signals to be shifted to the switch-node potential. With the move to ultra-fast switching GaN converters, there is a commercial need to achieve switch-node...

A Vertical Superjunction MOSFET With n-Si and p-3C-SiC Pillars
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A vertical superjunction (SJ) MOSFET with n-Si and p-3C-SiC pillars is introduced. Since 3C-SiC has 4x higher breakdown electric field than Si, the sensitivity of the breakdown voltage (VB) to charge imbalances is weakened, which helps to improve the...

Optimization of SiC UMOSFET Structure for Improvement of Breakdown Voltage and ON-Resistance
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper proposes an optimized structure of 4H-SiC U-shaped accumulation-mode MOSFET (U-ACCUFET), which exhibits lower on-resistance and higher breakdown voltage. In this structure, an n-doped region is added underneath the gate trench, which covers the p⁺...

Impact of Termination Region on Switching Loss for SiC MOSFET
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Due to outstanding properties of silicon carbide (SiC) and unipolar current conduction mechanism, the active chip size of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) is significantly shrunk, which significantly improves switching performance. However, the...

High Efficiency Fully Integrated Switched-Capacitor Voltage Regulator for Battery-Connected Applications in Low-Breakdown Process Technologies
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Conventional implementations of fully integrated, battery-connected, switched capacitor voltage regulators (SCVRs) require either thick-oxide MOSFETs or stacked thin-oxide MOSFETs as power switches to sustain the voltage stress induced by a...

A High Breakdown Voltage Superjunction MOSFET By Utilizing Double Trench Filling Epitaxy Growth
2018 Edition, October 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Due to its outstanding productivity for fabricating the superjunction MOSFET structure compared to multi-epitaxy process, trench filling epitaxy growth is widely used. To reduce the crystal defect during the filling, the trench etching is tilted. Tilted trench disturbs the...

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