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Highly reliable 26nm 64Gb MLC E2NAND (Embedded-ECC & Enhanced-efficiency) flash memory with MSP (Memory Signal Processing) controller
2011 Edition, June 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A highly reliable 26nm 64GB MLC E2NAND (E2: Embedded-ECC & Enhanced-efficiency) flash memory has been successfully developed. To overcome scaling challenges, novel integration and operation technologies, such as...

A highly reliable cleaning process
2018 Edition, August 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Soldering is an important process for the production of electronic products. For high-reliability electronic products, various types of pollutants introduced after soldering are unacceptable and must be cleaned to meet their use requirements. With the increase of product assembly...

Highly-reliable integrated circuits for Gro
2017 Edition, October 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper deal with highly-reliable integrated circuits for ground and space applications especially strong against soft errors. In the terrestrial region, neutrons and alpha particles are main sources to cause soft errors. They flip contents of storage cells such as SRAMs and...

A Low Power 64 Gb MLC NAND-Flash Memory in 15 nm CMOS Technology
2016 Edition, Volume 51, January 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 75 mm2 low power 64 Gb MLC NAND flash memory capable of 30 MB/s program throughput and 533 MB/s data transfer rate at 1.8 V supply voltage is developed in 15 nm CMOS technology. 36% power reduction from 3.3 V design is achieved by a new pumping scheme. New low current peak...

Highly reliable SEE hardened clock gating cells
2018 Edition, January 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper focuses on reliability of clock synchronization and such significant part of it as clock gating cells. Heavy ions interact with clock tree cells could cause peculiar Single Event Effects. SEE in clock gating cell could lead to multiple data corruption in all loaded memory...

Developing highly reliable software
1997 Edition, Volume 17, September 1, 1997 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

To build dependable software for safety-related applications in nuclear power plants, we developed a few qualified software components and used them in all the systems. Most of the safety-critical systems are real-time systems that require a guaranteed response time. These systems need real-time...

Highly reliable harmony search algorithm
2009 Edition, August 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, after a literature overview, studies will be concentrated on Pitch Adjustment Ratio function of Harmony Search Algorithm. A more rational function will be proposed which increase the robustness of algorithm and therefore leads to a highly reliable algorithm Simulations...

Highly reliable stochastic flow network reliability estimation
2016 Edition, October 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This state of the art discusses the problem of reliability estimation for highly reliable stochastic flow networks. There are algorithms to compute this reliability exactly, but they have exponential complexity, making the problem intractable for large or even medium sized networks....

A Scalable Architecture for Highly Reliable Certification
2013 Edition, July 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Building a certification authority (CA) that is both decentralized and fully reliable is impossible. However, the limitation thus imposed on scalability is unacceptable for many types of information systems, such as e-government services. This paper proposes a solution to build a...

A 58-nm 2-Gb MLC “B4-FlashMemory with Flexible Multisector Architecture
2017 Edition, Volume 52, May 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 58-nm 2-Gb multi-level cell (MLC) B4-Flash memory with flexible multisector architecture has been developed, which can be realized by unique features of B4-Flash with P-channel cell; large-data programming with small cell current thanks to back...

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