loading
Reconfigurable Writing Architecture for Reliable RRAM Operation in Wide Temperature Ranges
2017 Edition, Volume 25, April 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Resistive switching memories [resistive RAM (RRAM)] are an attractive alternative to nonvolatile storage and nonconventional computing systems, but their behavior strongly depends on the cell features, driver circuit, and working conditions. In particular, the circuit temperature and writing...

Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range
2014 Edition, Volume 35, December 1, 2014 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this letter, silicon carbide MOSFET-based integrated circuits have been designed, fabricated, and successfully tested from -193 °C (80 K) to 500 °C. Silicon carbide single MOSFETs remained fully operational over a 700-°C wide temperature range and exhibited stable I-V...

Wide-temperature-range, 25-Gbps error-free operation of integrated silicon photonic transmitter using wavelength-controlled micro ring modulator
2015 Edition, September 1, 2015 - Viajes el Corte Ingles, VECISA

We investigated wavelength-control-characteristics of a silicon photonic transmitter employing heater-integrated silicon micro-ring-modulator and flip-chip integrated CMOS driver. A novel wavelength control successfully demonstrated error-free operation at 25 Gbps during...

Ultra Linear Dual-band WLAN Front-End Module for 802.11 a/b/g/n Applications with Wide Voltage and Temperature Range Operation
2007 Edition, June 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A compact 7 times 8 times 1.1 mm3 dual-band Wireless LAN front-end module (FEM) having high linearity and wide temperature (-40 to 85degC) and voltage (2.7 to 4.5 V) operating ranges is presented. The FEM features 28 dB gain and 19.8 dBm at 54 Mbps with EVM...

Design of a silicon carbide smart power switch with stable operation over a wide temperature range
1997 Edition, Volume 1, January 1, 1997 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A temperature-insensitive silicon carbide smart power switch connected in a high side configuration is proposed. Based on the temperature-insensitive comparator, the switch provides many important protection functions that include over-voltage detection, under-voltage...

DFB lasers with tapered active stripe for narrow beam divergence
1998 Edition, January 1, 1998 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Summary form only given. We present a 1.3-/spl mu/m gain-coupled DFB semiconductor laser with a tapered active stripe. The fabricated laser shows narrow beam divergence of 13-14 degrees and high side-mode suppression ratio (SMSR) of >45...

Frequency Tuning of Wide Temperature Range CMOS LC VCOs
2011 Edition, Volume 46, September 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper analyzes various aspects of the performance of LC VCOs over temperature with emphasis on the temperature dependence of KVCO. A novel frequency-tuning scheme is proposed which allows wide temperature range operation...

Adaptive Neuro-control System for Superheated Steam Temperature of Power Plant over Wide Range Operation
2006 Edition, Volume 1, October 1, 2006 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, the dynamics of a superheated steam temperature process in a 600MW supercritical once-through boiler is first analyzed. The dynamics is influenced by the operating conditions represented by steam flow and steam pressure mainly. An intelligent cascade control system is...

Wide-temperature-range (25°C to 80°C) 53-Gbaud PAM4 (106-Gb/s) Operation of 1.3-μ;m Directly Modulated DFB Lasers for 10-km Transmission
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 1.3-μm directly modulated distributed feedback laser was newly developed by adopting an asymmetric corrugation pitch modulated grating structure and an InGaAlAs multi-quantum-well active layer with both a high optical confinement factor and a high differential...

Wide-Temperature-Range (25–80 °C) 53-Gbaud PAM4 (106-Gb/s) Operation of 1.3- μ m Directly Modulated DFB Lasers for 10-km Transmission
2019 Edition, Volume 37, April 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 1.3- μ m directly modulated distributed feedback laser was newly developed by adopting an asymmetric corrugation pitch modulated grating structure and an InGaAlAs multiquantum well active layer with both a high optical confinement factor and a high differential...

Advertisement