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TID Response of AD590 Temperature Sensor in Wide Operation Temperature Range
2018 Edition, July 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Total ionizing dose response of AD590 temperature sensor was investigated in wide operation temperature range. Obtained results can be useful for designers of electronic devices for nuclear and space applications.

Wide Temperature Range Operation of a 1.55- $\mu$ m 40-Gb/s Electroabsorption Modulator Integrated DFB Laser for Very Short-Reach Applications
2009 Edition, Volume 21, September 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present the uncooled operation of a 1.55- mum 40-Gb/s InGaAlAs electroabsorption modulator (EAM) integrated distributed-feedback (DFB) laser within a temperature range of 95degC (-15degC to 80degC ). To the best of our knowledge, this is...

Wide-temperature-range operation of 1.3-μm beam expander-integrated laser diodes grown by in-plane thickness control MOVPE using a silicon shadow mask
1996 Edition, Volume 8, April 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A new fabrication method of high-quality thickness-tapered semiconductor waveguides is proposed based on controlling in-plane thickness during MOVPE by using a comb-shaped silicon shadow mask. It was used to fabricate a 1.3-μm-wavelength narrow-beam (less than 13/spl deg/) InGaAsP-InP...

Wide-temperature-range operation of a butt-joint spot-size converter integrated 1.3-/spl mu/m light-emission-and-detection (LEAD) diode
1997 Edition, Volume 11, January 1, 1997 - IEEE - Institute of Electrical and Electronics Engineers, Inc.
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Silicon-to-silicon microswitch with wide operation temperature range
2015 Edition, June 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Using an ultra-clean vacuum sealing process, an encapsulated Si-to-Si contact micro switch is fabricated and characterized. This three-terminal micro switch relies on a curved beam (source) that actuates toward the contact terminal (drain) by charging the control terminal (gate). We report the...

Estimation of the Radiation Hardness of Bipolar Voltage Comparators in Wide Operation Temperature Range
2017 Edition, October 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Radiation induced degradation of widely used bipolar voltage comparators was investigated in wide temperature range from high to liquid nitrogen temperatures. It was obtained, that the parametric degradation is significantly greater at low...

VCSELs with nonuniform multiple quantum wells for a very wide temperature range of CW operation
1996 Edition, January 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Summary form only given. The temperature range over which cw operation of vertical-cavity surface-emitting lasers (VCSELs) exhibit a low current threshold can be extended by broadening the gain spectrum. This can be achieved through the use of a...

VCSELs with nonuniform multiple quantum wells for a very wide temperature range of CW operation
1996 Edition, January 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Summary form only given. The temperature range over which CW operation of vertical-cavity surface-emitting lasers (VCSELs) exhibit a low current threshold can be extended by broadening the gain spectrum. This can be achieved through the use of...

Cryogenic VCSELs with chirped multiple quantum wells for a very wide temperature range of CW operation
1996 Edition, Volume 8, November 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Cryogenic optical data links require an efficient optical source with temperature-insensitive continuous-wave (CW) operation at low temperatures. Also, to simplify optical alignment, it is desirable to obtain CW operation over a broad temperature...

Total Dose Radiation Response of n-Channel Enhancement Mode Field Effect Transistors over Wide Operation Temperature Range
2017 Edition, July 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Total dose radiation response of the n-channel 2N7002 transistors was examined at different temperatures. Voltage-current characteristics of the devices were measured before and after irradiation in wide temperature range from 80 K to 350 K.

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