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High-power, wide-temperature range operation of 1.3-μm gain-coupled DFB lasers with automatically buried InAsP absorptive grating
1996 Edition, Volume 8, October 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

DFB lasers operating at 1.3 μm with gain-coupling structure show single-mode operation over a wide temperature range of -20/spl sim/85/spl deg/C and up to a high power of 130 mW. These lasers have...

High-power, wide-temperature range operation of 1.3-/spl mu/m complex-coupled DFB lasers with automatically buried absorptive grating
1996 Edition, January 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Summary form only given. In this paper, we present a novel structure of 1.3 /spl mu/m strained-layer multiple quantum well (MQW) complex-coupled DFB laser with automatically buried absorptive grating. These lasers can be...

Wide temperature range operation of DFB Lasers at 1310 and 1490nm
2008 Edition, September 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This work reports the wide temperature range operation of 1310 and 1490 nm DFB lasers composed of InGaAsP/InP buried heterostructures. Ultrawide temperature range single mode operation has been demonstrated in 1310...

Wide temperature range operation of DFB lasers at 1.3 /spl mu/m wavelength
1997 Edition, January 1, 1997 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Summary form only given. In this talk, advances in wide temperature DFB lasers will be reviewed. The principles for wide temperature range operation of a DFB laser will be addressed. Important issues such as maintaining...

Device Instability of ReRAM and a Novel Reference Cell Design for Wide Temperature Range Operation
2017 Edition, Volume 38, September 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This letter addresses two difficult challenges for transition metal oxide resistive random access memories (ReRAMs)-sensitivity to operation temperature and random fluctuation of resistance value. A careful study of a WOx ReRAM array reveals that these devices are...

Wide temperature range operation of GaN HEMTs for power dense energy conversion
2017 Edition, May 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Device characterization of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) from 48 K to 300 K is performed in order to assess the switch's potential performance in superconducting power systems where power densities upward of 6 MW/m3 are required....

Fiber-grating external-cavity-laser with MQW semiconductor optical amplifier for wide-temperature-range operation
1996 Edition, January 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Summary form only given. In summary, we have investigated the temperature dependence of fiber grating external cavity MQW SOA lasers (FG-ECLs), and found the detuning should be zero at 25 C for good single-mode operation over a wide-temperature...

Wide Temperature Range Operation of 25-Gb/s 1.3-μm InGaAlAs Directly Modulated Lasers
2011 Edition, Volume 17, September 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

High-speed 1.3-μm directly modulated lasers (DMLs) have been developed to support sharply rising optical communications traffic. The most crucial requirement for these lasers is the ability to operate over a wide temperature range with no...

Wide temperature range operation of 10-/40-Gbps 1.55-μm electroabsorption modulator integrated DFB laser
2010 Edition, July 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

10-Gb/s 80-km and 40-Gb/s 2-km SMF transmissions with low power penalty over wide temperature range are demonstrated with a 1.55-μm InGaAlAs EAM-integrated DFB laser. These devices are suitable for use as 10-/40-Gb/s uncooled light sources.

Compensation for Second-Order Temperature Dependence in Athermal Arrayed-Waveguide Grating Realizing Wide Temperature Range Operation
2009 Edition, Volume 21, November 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We propose a new compensation technique for the second-order temperature dependence in a silica-based arrayed-waveguide grating (AWG) multi/demultiplexer with a resin-filled groove that realizes a wide operating temperature range. We newly employ an...

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