loading
Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

It is known that the commercialized white light emitting diodes (WLEDs) depend on phosphor conversion, which is limited by the unbalanced carrier injection in multiple quantum wells (MQWs) and low down-conversion efficiency. To solve these problems, hybrid organic/inorganic III-nitride WLEDs were...

Hybrid White Light-Emitting Diodes Utilizing Radiative or Nonradiative Energy Transfer for Wavelength Conversion
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Hybrid light-emitting diodes (LEDs) were fabricated by spin coating poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) on blue InGaN/GaN multiple-quantum-well (MQW) LED chips as a downconverter. As the F8BT film thickness was in the range of 235-290 nm, the hybrid...

Fabrication and Characterization of Si Substrate-Free InGaN Light-Emitting Diodes and Their Application in Visible Light Communications
2017 Edition, Volume 9, April 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Visible light communications with InGaN-based light-emitting diodes (LEDs) grown on large-diameter (6-inch) and cost-effective Si (111) substrates are investigated experimentally. During epitaxial growth, the transition layers consisted of the step-graded AlGaN buffers incorporated...

Hybrid Cyan Nitride/Red Phosphors White Light-emitting Diodes with Micro-hole structures
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Hybrid white light emitting diodes (LEDs) has been developed utilizing micro-LEDs radiatively pumping down-conversion phosphor materials. The cyan InGaN/GaN multiple quantum wells (MQWs) LEDs with 95 μm in square are fabricated into 4×4 pixels as one unit in 4 inch wafer...

Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction
2019 Edition, Volume 11, August 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

It is known that the commercialized white light-emitting diodes (WLEDs) depend on phosphor conversion, which is limited by the unbalanced carrier injection in multiple quantum wells (MQWs) and low down-conversion efficiency. To solve these problems, hybrid organic/inorganic III-nitride WLEDs were...

Colloidal quantum dot color converters for visible light communications
2016 Edition, October 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The properties and performance of CdSSe/ZnS colloidal quantum dot composite materials for use as InGaN LED color converters in visible light communications applications is reported. 500Mb/s optical wireless transmission is demonstrated.

An Optically Readable InGaN/GaN RRAM
2016 Edition, Volume 63, June 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The unidirectional bipolar resistance switching in GaN/InGaN-based light-emitting diode (LED) was discovered to explore optically readable resistive random access memory (RRAM) device. The device displays stable resistance window in both endurance and retention tests, showing good...

Performance comparison of one &two quantum wells light emitting diodes simulated with COMSOL multiphysics
2016 Edition, August 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Light-emitting diodes are employed in numerous applications such as, displaying information, communications, sensing, illumination and lighting. In this paper, AlGaN/InGaN based two quantum wells (2QWs) light emitting diode (LED) is modeled and studied numerically using COMSOL...

High-Efficiency InGaN/GaN CoreGÇôShell Nanorod Light-Emitting Diodes With Low-Peak Blueshift and Efficiency Droop
2017 Edition, Volume 16, March 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this study, novel three-dimensional (3-D) nanoscale structures and methodology are demonstrated for application in high-efficiency core-shell nanorod (NR) light-emitting diodes (LEDs). The key to our successful growth of the structures is the introduction of passivation,...

Hybrid White Light-Emitting Diodes Utilizing Radiative or Nonradiative Energy Transfer for Wavelength Conversion
2018 Edition, Volume 65, November 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Hybrid light-emitting diodes (LEDs) were fabricated by spin coating poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) on blue InGaN/GaN multiple-quantum-well (MQW) LED chips as a downconverter. As the F8BT film thickness was in the range of 235-290 nm, the hybrid...

Advertisement