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Efficiency Enhancement of InGaN MQW LED Using Compositionally Step Graded InGaN Barrier on SiC Substrate
2016 Edition, Volume 12, October 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, we designed and simulated a silicon carbide (SiC) technology, InGaN multiple quantum well (MQW) light-emitting diode (LED) using a compositionally step graded (CSG) InGaN barrier in the active region. The optical power, internal quantum efficiency (IQE),...

Preparation of anodic aluminum oxide nano-template using Al/Si substrate for large area LED applications
2010 Edition, August 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Anodic aluminum oxide (AAO) nano-templates were prepared using the Al/Si substrates with the thickness of the aluminum films of about 500 nm. The pores of various sizes and depths were fabricated electrochemically through anodic oxidation. The optimum morphological structure for large area...

“HVPE InGaN for LEDs- State of the art and horizons”
2009 Edition, May 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We will discuss results of InGaN material and device growth by HVPE. Application of new device concepts for LEDs arising from new HVPE capabilities will be discussed, including all-HVPE InGaN based LEDs for SSL.

Advances in InGaN technology for light-emitting diodes and semiconductor lasers
1998 Edition, January 1, 1998 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The past ten years have seen a virtual revolution for the optoelectronics industry dealing with LEDs. With the development of new III-V materials, such as AlGaAs, AlInGaP, and InGaN, and epitaxial structures capable of very efficient visible light generation, a vast new field of...

Analysis of new direct on PCB board attached high power flip-chip LEDs
2015 Edition, May 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Recent progress in wafer level packaging technologies has enabled high power Flip Chip (FC-LEDs), Chip Scale Package (CSP-LEDs) and Wafer Level LED Packages (WLP-LEDs) for direct assembly on printed circuit boards (PCB) for lighting application. The...

One-Shot Exposure for Patterning Two-Dimensional Photonic Crystals to Enhance Light Extraction of InGaN-Based Green LEDs
2008 Edition, Volume 20, January 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

To promote the feasibility of using photonic crystals to enhance light extraction of light-emitting diodes (LEDs) for industrial applications, the request for the high-yield and simple exposure process to pattern two-dimensional photonic crystals (2DPCs) becomes rather urgent....

High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes
2016 Edition, Volume 8, October 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Freestanding semipolar (11-22) indium gallium nitride (InGaN) multiple-quantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50-μm-thick GaN layer grown on a patterned (10-12) r-plane sapphire...

Degradation of blue AlGaN/InGaN/GaN LEDs subjected to high current pulses
1995 Edition, January 1, 1995 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Short-wavelength, visible-light emitting optoelectronic devices are needed for a wide range of commercial applications, including high-density optical data storage, full-color displays, and underwater communications. In 1994, high-brightness blue LEDs based on gallium...

Process Integration and Interconnection Design of Passive-Matrix LED Micro-Displays With 256 Pixel-Per-Inch Resolution
2020 Edition, Volume 8, January 1, 2020 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 0.28-inch InGaN-based blue micro-LED display with 256 pixel-per-inch resolution and a pitch of $100~{{\mu }}\text{m}$ was successfully fabricated in this study. A thick Ti/Al/Ti/Au interconnection metal was deposited on the n-type gallium nitride (n-GaN) region to reduce the...

Optical cavity effects in InGaN micro-light-emitting diodes with metallic coating
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We implement finite difference method (FDM) to calculate the optical cavity effects in InGaN micro-light-emitting diodes (mLED) with metallic coating. The dispersion relation, mode profile, energy density W of electromagnetic field, cavity quality factor Q, and effective mode area Aeff are...

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