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High-temperature and high-speed operation of a 1.3-μm uncooled InGaAsP-InP DFB laser
2002 Edition, Volume 14, September 1, 2002 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

1.3-μm uncooled InGaAsP-InP loss-coupled distributed feedback lasers operating over 10 Gb/s and at 85/spl deg/C were successfully fabricated. In order to achieve high-speed and high-temperature operation...

High speed and high temperature operation of VCSELs
2015 Edition, March 1, 2015 - Optical Society (The) (OSA)

VCSELs operating at high bit rates over a wide temperature range are needed for the next generation optical interconnect standards. We report on the high speed and high temperature characteristics of 850 nm VCSELs and VCSEL...

Optimizationof VCSEL structure for high-speed operation
2008 Edition, September 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The optimization of our tapered-oxide-apertured VCSEL structure for high-speed operation is presented. Using a new aperture design and p-doping recipe in the top mirror, bandwidths >20 GHz and 35 Gb/s error-free operation has been demonstrated.

Ultra-high temperature and ultra-high speed operation of 1.3 /spl mu/m AlGaInAs/InP uncooled laser diodes
1995 Edition, Volume 1, January 1, 1995 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Summary form only given. In conclusion, we have fabricated 1.3-/spl mu/m AlGaInAs-InP strain-compensated multi-quantum-well self-aligned ridge lasers with excellent high-temperature and high-speed characteristics. In the talk, device characteristics...

High-speed high-temperature operation of vertical-cavity surface-emitting lasers
2001 Edition, Volume 13, July 1, 2001 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Vertical-cavity surface-emitting lasers emitting at 850 nm have been developed that are capable of 10-Gb/s operation at high temperatures. Measurements are made at 10 and 12.5 Gb/s at temperatures up to 150/spl deg/C.

200/spl deg/C high-temperature and high-speed operation of 440 V lateral IGBTs on 1.5 /spl mu/m thick SOI
1993 Edition, January 1, 1993 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper experimentally verifies that high-voltage lateral IGBTs fabricated on SOI of less than 5 /spl mu/m exhibit high switching speed without the need for any special device design. This paper also verifies, for the first time, that thin SOI is a promising...

High-speed operation of a mid-infrared optical system at room temperature
2016 Edition, June 1, 2016 - Optical Society (The) (OSA)

We report on the room-temperature operation of a high-speed mid-infrared optical system (f3-dB ≈ 0.5 GHz). This system consists of an efficient interband cascade laser and an uncooled high-performance interband cascade...

High-speed operation of strained InGaAs/InGaAsP MQW lasers
1992 Edition, January 1, 1992 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

High-speed operation of InGaAs/InGaAsP strained-layer MQW lasers has been achieved at 70 /spl deg/C under zero-bias condition by optimizing the SCH structure.

Epitaxially grown base transistor for high-speed operation
1987 Edition, Volume 8, November 1, 1987 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We developed a transistor with a very thin base to improve the speed of the intrinsic bipolar transistor. The epitaxially grown base transistor, or EBT, consists of an in-situ boron-doped epitaxial base layer that is photochemically grown, Photoepitaxy, with...

High-speed operation of demultiplexer up to 56 GHz
2003 Edition, Volume 13, June 1, 2003 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 1-to-4 demultiplexer (DEMUX) was designed based on Single Flux Quantum (SFQ) circuitry and high-speed operation was confirmed using on-chip testing. The circuit was designed with a binary-tree structure to enable high-speed...

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