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High Power InGaN LEDs & Applications
2005 Edition, January 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.
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Modified cone shapes on patterned sapphire substrates for high performance InGaN LED applications
2013 Edition, July 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this study, GaN-based light emitting diodes (LEDs) were prepared on the cone-shaped patterned sapphire substrates (PSSs) by metal-organic chemical vapor deposition. To improve the epilayer quality and device performance of LEDs, the PSSs were further wet etched to form the modified...

Image-containing InGaN LEDs for pattern-transfer applications
2010 Edition, November 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report a simple process which enables the fabrication of a single light-emitting diode with spatially patterned emission. The patterning is based on the selective passivation of the p-doped GaN with a CHF3 plasma treatment.

Review on failure mechanisms InGaN/GaN MQW LED for public light applications
2019 Edition, June 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper gave an actual overview of sustainability, robustness and reliability of GaN LED devices. The overview deals with low, medium and high power GaN LEDs and detailed the main functional parameters drift to estimate performances of the technology regarding...

Novel Device Design for High-Power InGaN/Sapphire LEDs Using Copper Heat Spreader With Reflector
2009 Edition, Volume 15, July 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Direct integration of InGaN/sapphire LED with a cup-shaped copper heat spreader was proposed for enhancing light extraction and heat dissipation by self-aligned photolithography and copper electroforming techniques. Based on optical simulation results, geometric design for a copper...

Epitaxial Growth of InGaN Multiple-Quantum-Well LEDs With Improved Characteristics and Their Application in Underwater Optical Wireless Communications
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

InGaN light-emitting diodes (LEDs) grown with a thin GaN barrier and a gradually reduced well width in the multiple-quantum-well (MQW) regions close to n-GaN are proposed for use in underwater optical wireless communications. Experimentally, LED epiwafers grown by metal-organic...

Epitaxial Growth of InGaN Multiple-Quantum-Well LEDs With Improved Characteristics and Their Application in Underwater Optical Wireless Communications
2018 Edition, Volume 65, October 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

InGaN light-emitting diodes (LEDs) grown with a thin GaN barrier and a gradually reduced well width in the multiple-quantum-well (MQW) regions close to n-GaN are proposed for use in underwater optical wireless communications. Experimentally, LED epiwafers grown by metal-organic...

InGaN-Based Light-Emitting Diodes With a Sawtooth-Shaped Sidewall on Sapphire Substrate
2012 Edition, Volume 24, July 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An InGaN light-emitting diode (LED) with a cone-shaped GaN structure and a sawtooth-shaped sapphire sidewall structure was fabricated through a laser-drilling process. The fabricated procedures consisted of a laser scribing/drilling process, a wet etching process, and a chip cleaving...

Carrier Dynamics in InGaN/GaN Micro-LEDs: An RF Appraoch to Understand Efficiency Issues
2019 Edition, September 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We utilize a rate equation approach and RF measurement technique to study carrier dynamics in InGaN/GaN LEDs. Study of carrier dynamics aids in understanding efficiency challenges and design of high-speed, efficient micro-LEDs for visible-light communication and...

High-power InGaN/AlGaN double-heterostructure blue-light-emitting diodes
1994 Edition, January 1, 1994 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Highly efficient InGaN/AlGaN double-heterostructure blue-light-emitting diodes (LEDs) with an external quantum efficiency of 5.4% were fabricated by codoping Zn and Si into an InGaN active layer. The output power was as high as 3 mW at a forward current of 20 mA....

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