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High power (>27 W) semiconductor disk laser based on pre-metalized diamond heat-spreader
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

High power semiconductor disk lasers (SDLs) were demonstrated based on the thermal management using pre-metalized diamond heat-spreader. The processing of pre-metallization using Cu-Sn alloy was...

High Power (>27 W) Semiconductor Disk Laser Based on Pre-Metalized Diamond Heat-Spreader
2019 Edition, Volume 11, April 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

High power semiconductor disk lasers (SDLs) were demonstrated based on the thermal management using pre-metalized diamond heat-spreader. The processing of pre-metallization using Cu-Sn alloy was...

The Thermal Resistance of High-Power Semiconductor Disk Lasers
2015 Edition, Volume 51, May 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present a model for the simulation of the thermal resistance of flip-chip bonded vertical-external-cavity surface-emitting lasers based on the finite-element method. Therefore, we take on and deepen precedent models with regard to three modifications. Our model for...

What is the Best Material for Electronics Thermal Management? Diamond Materials, Part 3
August 29, 2018 - IEEE GlobalSpec

Figure 1. Typical CVD diamond heat spreader package geometry. Source: Element 6Diamond has the highest thermal conductivity of any material, which makes it an excellent choice for thermal management in electronic devices. Once a semiconducting device is fabricated, the chip...

Wafer-fused 1310 nm and 1550 nm mode-locked semiconductor disk lasers
2010 Edition, June 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report on fabrication and performance of wafer fused, high power, passively mode-locked semiconductor disc lasers operating in 1310 nm and 1550 nm bands. These devices comprise gain mirrors based on InAlGaAs/InP multi quantum well active regions...

Generation of high power (> 7W) yellow-orange radiation by frequency doubling of GaInNAs-based semiconductor disk laser
2011 Edition, May 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report recent developments of GaInNAs-based semiconductor disk lasers (SDLs) emitting at around 590 nm. GaInNAs/GaAs (dilute nitride) quantum-wells enable lasing at a wavelength of ∼1180 nm with reduced indium content and hence reduced lattice strain as compared to...

Why is Diamond an Electrical Engineer’s Best Friend? Diamond Materials, Part 2
August 13, 2018 - IEEE GlobalSpec

Figure 1. Microwave plasma chemical vapor depostion (MPCVD) diamond synthesis. Source: Seki Diamond SystemsDiamond is much more than a pretty stone. Diamond has unique properties such as the highest thermal conductivity of any material, high electron mobility, an...

Thermal Management in 2.3- $\mu{\hbox {m}}$ Semiconductor Disk Lasers: A Finite Element Analysis
2008 Edition, Volume 44, February 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Finite element analysis is used to study heat flow in a 2.3-mum semiconductor disk laser (or vertical-external-cavity surface-emitting laser) based on GalnAsSb-AlGaAsSb. An intra-cavity diamond heatspreader is shown to significantly improve...

Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers
2005 Edition, Volume 11, September 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We have developed a numerical model for investigating material heating and its effects on the performance of optically pumped InP-based long-wavelength semiconductor disk lasers. Material heating and optical wavefront distortion due to thermal lensing are...

1.3- $\mu$ m Mode-Locked Disk Laser With Wafer Fused Gain and SESAM Structures
2010 Edition, Volume 22, June 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report 1.3-μm mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localized wafer...

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