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Thermo-mechanical simulations of RF-MEMS 0-level package based on wafer bonding by soldering
2010 Edition, April 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Models and results are presented of thermomechanical simulations of an RF-MEMS 0-level package based on wafer bonding by soldering. For moderate realistic loads most relevant responses are accetable. However, residual stress and thermal expansion of the solder material lead to...

Monolithic AlN MEMS-CMOS resonant transformer for wake-up receivers
2017 Edition, September 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A monolithic piezoelectric MEMS-CMOS resonant transformer that can be used in ultra-low-power high-efficiency RF sensing applications is presented for the first time. The MEMS-CMOS resonant transformer is based on a 59 MHz 2-port Aluminum...

Optimization of 0-level packaging for RF-MEMS devices
2003 Edition, Volume 2, January 1, 2003 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper reports on the optimization of the 0-level package for RF-MEMS devices like switches and tunable capacitors. The 0-level package consists of an on-chip cavity obtained by flip-chip mounting a capping chip over the RF-MEMS device, using BCB as the...

A 0-level packaged RF-MEMS switched wideband GaAs LNA MMIC
2013 Edition, October 1, 2013 - European Microwave Association

This paper focuses on the design of an RF-MEMS Dicke switched wideband LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The 0-level packaged GaAs MEMS LNA circuit shows 10-17 dB of gain at 16-34 GHz when switched on. The...

A 0-level packaged RF-MEMS switched wideband GaAs LNA MMIC
2013 Edition, October 1, 2013 - European Microwave Association

This paper focuses on the design of an RF-MEMS Dicke switched wideband LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The 0-level packaged GaAs MEMS LNA circuit shows 10-17 dB of gain at 16-34 GHz when switched on. The...

Metal-bonded, hermetic 0-level package for MEMS
2010 Edition, December 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents a zero-level packaging technology for hermetic encapsulation of MEMS. The technology relies on the "chip capping" of the MEMS using a metallic bond made by means of diffusion soldering of a Cu-Sn system at a temperature of around 250°C. For this, on a "capping...

A 0–10GHz SP16T MEMS switch for switched beam satellite antenna systems
2014 Edition, October 1, 2014 - European Microwave Association

This paper presents the design, manufacturing and testing of a MEMS SP16T switch to be used in open loop reconfigurable antenna systems. It consists of the hybrid integration of #5 MEMS SP4T switches (realized on HR Silicon substrate) on a multilayer substrate. The bilayer structure...

Integration of 0/1-level packaged RF-MEMS devices on MCM-D at millimeter-wave frequencies
2005 Edition, January 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper reports on the optimization of 0/1-level packaged CPW lines and RF-MEMS switches up to millimeter wave frequencies. The 0-level package consists of an on-chip cavity obtained by flip-chip mounting a capping chip over the RF-MEMS device using BCB...

A dielectric-bridge-type MEMS series contact switch for 0-10GHz applications
2006 Edition, October 1, 2006 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A dielectric-bridge-type MEMS series contact switch is designed, fabricated and tested. This structure allows electrically insulating the control circuit from the RF signal path, and avoids the possible crosstalk. SiON is used as the function dielectric material for its low intrinsic...

Integration of 0/1-Level Packaged RF-MEMS Devices on MCM-D at Millimeter-Wave Frequencies
2007 Edition, Volume 30, August 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper reports on the development and optimization of 0/1-level packaged coplanar waveguide (CPW) lines and radio-frequency microelectromechanical systems (RF-MEMS) switches up to millimeter-wave frequencies. The 0-level package consists of an on-chip cavity obtained...

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