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Growth of direct bandgap Ge1-xSnx alloys by modified magnetron sputtering
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report the growth of direct bandgap single-crystalline Ge1-xSnx thin films on unheated substrates by a modified magnetron sputtering system. The Ge1-xSnx thin films were deposited on Si, Ge and GaAs substrates at...

Growth of Direct Bandgap Ge1xSnx Alloys by Modified Magnetron Sputtering
2020 Edition, Volume 56, February 1, 2020 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report the growth of direct bandgap single-crystalline Ge1-xSnx thin films on unheated substrates by a modified magnetron sputtering system. The Ge1-xSnx thin films were deposited on Si, Ge, and GaAs substrates...

Photoelectrical properties of TOS thin films based on TiO 2 prepared by modified magnetron sputtering
2008 Edition, October 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this work photoelectrical properties of the thin films based on TiO2 have been presented. Thin films were deposited by high energy (HE) magnetron sputtering process. The properties of thin films were modified by doping with Tb and Pd. Structural...

XRD and AFM studies of nanocrystalline TiO 2 thin films prepared by modified magnetron sputtering
2008 Edition, May 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this work, influence of magnetron sputtering parameters on structural properties of TiO2 thin films has been outlined. Titanium dioxide thin films were deposited on silicon substrates using reactive magnetron sputtering method. Structural properties...

Deposition of biaxially aligned yttria stabilized zirconia layers on metal tape by modified magnetron sputtering
2001 Edition, Volume 11, March 1, 2001 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Biaxially aligned thin films of yttria stabilized zirconia (YSZ) are frequently used as buffer layers for the development of high current carrying YBa/sub 2/Cu/sub 3/O/sub 7-x/ coated conductor. In this research, biaxially aligned YSZ has been deposited on different substrate...

Surface properties of fluoropolymer biomaterials modified by radio-frequency magnetron sputtering
2012 Edition, September 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We investigated the properties of the multilayer system: metal with polymer layer modified by radio-frequency magnetron sputtering of a solid target made from hydroxyapatite. The material of the polymer layer is thermoplastic copolymer of...

GeSn/GaAs Hetero-structure by Magnetron Sputtering
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report high quality GeSn/GaAs heterostructure photodetectors grown by a modified magnetron sputtering system. A metal-semiconductor-metal photoconductor is fabricated to examine the ability of photodetection for GeSn alloy. Then the GeSn/GaAs...

Theoretical analysis of strain effect on optical gain in Ge 1−x Sn x alloys
2016 Edition, July 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present a theoretical analysis of strain effect on optical gain in biaxially-stressed Ge1-xSnx alloys. The electronic band structure for biaxially-stressed Ge1-xSnx alloys is calculated using deformation potential theory and k·p method. For...

GeSn/GaAs Hetero-Structure by Magnetron Sputtering
2020 Edition, Volume 56, April 1, 2020 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report high quality GeSn/GaAs heterostructure photodetectors grown by a modified magnetron sputtering system. A metal-semiconductor-metal photoconductor is fabricated to examine the ability of photodetection for GeSn alloy. Then the GeSn/GaAs...

Optimized Ge1-xSnx/Ge Multiple-Quantum-Well Heterojunction Phototransistors for High-Performance SWIR Photodetection
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present the design and analysis of threeterminal Ge1..xSnx/Ge multiple-quantum-well (MQW) heterojunction phototransistors (HPTs) for high-performance shortwave infrared (SWIR) photodetection. The active layer incorporates Ge1..xSnx/Ge MQW structures between...

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