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GaSb-based laser diodes operating within the spectra range of 2–3.5 µm
2010 Edition, September 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Room temperature CW semiconductor lasers emitting above 2 µm and operating within spectra region 2 to 3.5 µm are in demand for laser spectroscopy, madical applications and solid state laser pumping. Since 1999 [1] this demand has...

GaSb-based laser diodes operating within spectral range of 2 – 3.5 µm
2009 Edition, May 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present the performance parameters of GaSb-based diode lasers operating in spectral region from 2 to 3.36µm. CW output power levels of 120mW at 3µm, 60mW at 3.1µm, and 15mW at 3.36µm (285K) are reported.

Advances in the development of the GaSb-based laser diodes operating within spectral range of 2 – 3.5 μm
2008 Edition, November 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This work discusses the latest achievements in design and performance of type I GaSb based lasers. It focuses on the performance of the room temperature operated lasers based on InGaAsSb/AlGaAsSb/GaSb and...

Narrow linewidth 2 µm GaSb-based semiconductor disk laser
2011 Edition, May 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In recent years, optically pumped semiconductor disk lasers (OPSDLs) have attracted increasing interest due to their capability of delivering simultaneously high output power and excellent beam quality [1]. Recently, the realization of high-performance OPSDLs...

Diode lasers operating in spectral range from 1.9 to 3.5 μm
2012 Edition, October 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Mid-infrared lasers operating at room temperature (RT) in continuous wave (CW) mode are in demand for a variety of applications including laser detection and ranging, spectroscopy and infrared countermeasures. GaSb-based type-I quantum well (QW)...

Passively mode-locked 2.7 and 3.2 μm GaSb-based cascade diode lasers
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The passively mode-locked type-I quantum well cascade diode lasers operating near 2.7 and 3.2 μm generated trains of the ∼10 ps long pulses with average power up to 10 mW. The devices based on laser heterostructures with reinforced...

High Brightness 2.1 μm Direct-Diode Laser Module
2019 Edition, June 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Direct diode lasers at 2 μm provide the opportunity for more compact sources that can perform similar tasks that are currently undertaken by solid state lasers operating in this wavelength. Infrared countermeasure, gas detection and atmospheric sensing are...

Passively Mode-Locked 2.7 and 3.2 μm GaSb-Based Cascade Diode Lasers
2020 Edition, Volume 38, April 1, 2020 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The passively mode-locked type-I quantum well cascade diode lasers operating near 2.7 and 3.2 μm generated trains of the ∼10 ps long pulses with average power up to 10 mW. The devices based on laser heterostructures with reinforced...

2.5 µm semiconductor disk laser with 130 nm tuning range
2011 Edition, May 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The primary advantage of semiconductor disk lasers compared with in-plane diode lasers is an improved transverse mode control which enables high output power with diffraction-limited beam quality [1, 2]. They combine many advantages of solid-state...

Diode-pumped mode-locked Tm:LuAG 2 μm laser based on GaSb-SESAM
2017 Edition, June 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Ultrafast 2μm lasers are capturing a growing interest for the use as pump and seed sources in optical parametric systems operating in the mid-IR, for IR super-continuum generation, and for time-resolved spectroscopy. However, the demonstration of...

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