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GaSb and GaInAsSb Photodetectors for λ ≫ 1.55 μm Prepared by Metal Organic Chemical Vapor Deposition
1988 Edition, September 1, 1988 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

p and n GaSb layers have been grown on GaSb and semi-insulating GaAs substrates by Metal Organic Chemical Vapor Deposition (MOCVD) method ; the lowest doping levels obtained are: p = 2 +ù 1016cm-3, n = 8 +ù 1015cm-3. P type Ga...

Resonant cavity enhanced GaInAsSb-AlAsSb photodetector grown by MBE for mid-IR applications
1996 Edition, Volume 8, May 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Resonant cavity enhanced photodetectors based on GaInAsSb-AlAsSb grown by MBE have been successfully fabricated and characterized to operate at near 2 μm wavelength range. By incorporating a 10-pair lattice matched AlAsSb-GaSb quarter wavelength...

Theoretical analysis of the detectivity in N-p and P-n GaSb/GaInAsSb infrared photodetectors
2000 Edition, Volume 47, March 1, 2000 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, the detectivity as well as the quantum efficiency and the zero-bias resistance-area product in N-p and P-n GaSb/Ga/sub 0.8/In/sub 0.2/As/sub 0.19/Sb/sub 0.81/ infrared detectors is analyzed, based on the incident wavelength and the parameters of...

Analysis, Optimization, and Design of 2–2.8 $\mu \hbox{m}$ Stacked Multiple-Junction PIN GaInAsSb/GaSb Photodetectors for Future O/E Interconnections
2010 Edition, Volume 57, February 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The 2-2.8 μm vertically stacked multiple-junction PIN GalnAsSb/GaSb photodetectors are analyzed, optimized, and designed based on an improved general mode to predict the optimal performance of PIN infrared photodetectors arising from nonequilibrium carrier...

Development and characterization of GaInAsSb and InAsSbP mid-infrared photodetectors
2000 Edition, January 1, 2000 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report work on liquid-phase heteroepitaxy of lattice-matched GaInAsSb (Andreev et al, 1989; Mebarki et al, 1996; Li et al, 1995; Yakovlev et al, 1991) and InAsSbP (Yakovlev et al, 1991; Garnham et al, 1988; Tournie et al, 1990) on GaSb and InAs substrates for...

Chemical vapor deposition of high-quality monolayer transition metal disulfides
2017 Edition, October 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Two-dimensional semiconductors, transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are an emerging material family with rich physical and chemical properties. Specifically, atomically thin monolayer TMDs exhibit...

Two level undercut-profile substrate-based filamentary coated conductors produced using metal organic chemical vapor deposition
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The two level undercut-profile substrate (2LUPS) has been introduced as a concept for subdividing rare-earth-Ba $_{2}$ Cu $_{3}$ O $_{7}$ (REBCO) coated conductors (CC) into narrow filaments which reduces the AC losses and improves field stability for DC magnets. The 2LUPS...

Silicon-on-insulator spectrometers with integrated GaInAsSb photodiode array for wideband operation from 1500 to 2300 nm
2013 Edition, June 1, 2013 - Optical Society (The) (OSA)

Four echelle-type spectrometers with heterogeneously integrated GaInAsSb photodetectors on a silicon-on-insulator chip is realized. The operating wavelengths stretch from 1500 to 2300 nm. A maximum channel crosstalk of -10 dB, dark current of -2.5 μA and responsivity of 0.61...

Tunable photodetectors based on strain compensated GaInAsSb/AlAsSb multiple quantum wells grown by molecular beam epitaxy
1997 Edition, Volume 44, December 1, 1997 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

GaInAsSb/AlGaAsSb strain compensated multiple quantum well (MQW) p-i-n structures grown by molecular beam epitaxy on GaSb substrates have been successfully fabricated into tunable photodiodes, which showed a large photoresponse peak shift up to 30 meV (80 nm) at 77 K under a...

Two Level Undercut-Profile Substrate-Based Filamentary Coated Conductors Produced Using Metal Organic Chemical Vapor Deposition
2018 Edition, Volume 28, June 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The two level undercut-profile substrate (2LUPS) has been introduced as a concept for subdividing rare-earth-Ba 2Cu3O7 coated conductors (CC) into narrow filaments that effectively reduces the ac losses and improves field stability for dc magnets. The 2LUPS consists of two...

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