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Study on the magnetic properties of Au/Ge/Ni ohmic contacts to gaAs/AlGaAs hterostructures
2010 Edition, June 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Ohmic contacts to 2DEG are crucial in quantized Hall resistance device fabrication. Magnetic property of the commonly used Au/Ge/Ni recipe for ohmic contact to 2DEG in a GaAs/AlGaAs heterostructure is studied in this summary paper.

Effects of Rapid Thermal Annealing on Ar Inductively Coupled Plasma-Treated n-Type 4H-SiC Schottky and Ohmic Contacts
2018 Edition, Volume 65, September 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The effects of Ar inductively coupled plasma (ICP) treatment followed by a 600 °C-1000 °C rapid thermal annealing (RTA) on the n-type 4H-silicon carbide (SiC) Schottky-barrier diodes and n+-implanted ohmic contacts were investigated. The ICP treatment...

Systematic comparison of metal contacts on CVD graphene
2015 Edition, September 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An experimental study was conducted for forming high quality ohmic contacts to graphene. Metal contacts of platinum/gold (Pt/Au), nickel/gold (Ni/Au), palladium (Pd), Ni, and Au to monolayer chemical vapor deposited graphene were studied. The experimental...

High Breakdown Voltage (-201) β-Ga $_{2}$ O $_{3}$ Schottky Rectifiers
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

β-Ga $_{2}$ O $_{3}$ Schottky barrier diodes were fabricated in a vertical geometry structure consisting of Ni/Au rectifying contacts without edge termination on Si-doped epitaxial layers (10 μm, n~ 4x10 $^{15}$ cm $^{-3}$ ) on Sn-doped bulk Ga $_{2}$ O...

Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing With Device Applications
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Although the melting laser annealing can activate the heavily phosphorus-doped epitaxial Ge on silicon-on-insulator by chemical vapor deposition, the dopant segregation occurs after the rapid thermal process at 550 °C for 3 min even with SiO₂ capping. However, the active dopant...

Low resistance TiO 2 -passivated calcium contacts to for crystalline silicon solar cells
2016 Edition, June 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

It has recently been shown that low resistance Ohmic contact to lightly doped n-type crystalline silicon (c-Si) is possible by direct metallization via a thin layer of the low work function metal calcium (φ ~2.9 eV) and an overlying aluminium capping...

The Effect of the Original Thickness of Ag in the Graphene-Ag Nanodots Transparent Conductive Layer on the Electrical and Optical Properties of GaN-Based UV-LEDs
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We investigate the electrical and optical properties of graphene-Ag nanodot compounds as transparent conductive layers (TCLs) for gallium nitride (GaN)-based ultraviolet light-emitting diodes (UV-LEDs) with different Ag thicknesses. As the thickness of Ag increases from 2 to 5 nm...

Low Resistance “Holey” Metal-graphene Electrical Contacts, Breakthrough for Achieving Graphene Field Effect Transistors (GFETs)
February 15, 2018 - IEEE GlobalSpec

Figure 1. Engineered "holey" metal-graphene contacts reduce contact resistance to GFETs, which will enable high-frequency performance. Source: Luca Anzi et al 2018Graphene is a very attractive material for enhancing high-frequency microelectronic device performance due to its...

Improvement of Ohmic Behavior of Back Contact in ZnSnP 2 Solar Cells by Inserting Cu 3 P
2019 Edition, June 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

One of the main issues for the improvement of solar cells is to develop Ohmic contacts with low contact resistance on absorbers, such as CIGS/MoSe2/Mo. In the case of ZnSnP2 (ZTP)-based solar cells, Cu is used as a back electrode. At...

A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report the first demonstration of Nitrogen polar GaN current aperture vertical electron transistor with a blocking electric field over 2.9MV/cm. The devices were grown by metalorganic chemical vapor deposition on a cplane sapphire substrate. The fabrication involved a...

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