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Area Efficient, 600V 4H-SiC JBS Diode Integrated MOSFETs (JBSFETs) for Power Converter Applications
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper reports the demonstration of a low voltage (<600V) monolithically integrated 4H-SiC MOSFET and JBS diode (JBSFET). A single metal and thermal treatment process were implemented to form ohmic contacts on N+ and P+ source regions while forming...

3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature
2016 Edition, Volume 37, September 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resistivity (~3 × 10-5 Ω · cm2) ohmic...

Role of W in W/Ni Bilayer Ohmic Contact to n-Type 4H-SiC From the Perspective of Device Applications
2018 Edition, Volume 65, February 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Ohmic contacts to n-type 4H-SiC using Ni layer and W/Ni bilayer were investigated and compared. The phase composition, electronic states, and carbon structural evolution of the contact layer were analyzed by X-ray diffraction, X-ray photoelectron...

Evaluating Thermal Contact Resistance for Ohmic type RF MEMS switch
2019 Edition, January 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

To understand and control the thermal contact resistance is critical for improving the performance of RF MEMS switch viz., low insertion loss, high isolation as well as low power consumption. This paper presents the design, modeling, and analysis of the...

Characterizing Point Contacting by Localized Dielectric Breakdown and Its Use in Silicon Solar Cell Applications
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The point contacting by localized dielectric breakdown (PLDB) method utilizes a dielectric breakdown above a locally doped region to form ohmic contacts for a solar cell rear surface. This article describes the design and fabrication of the PLDB solar cells and...

Graphene for metal-semiconductor Ohmic contacts
2012 Edition, October 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

One of the key components of modern device structures is the metal-semiconductor (MS) contact with low symmetric contact resistance. We report on a MS contact structure utilizing graphene insertion. In this strategy, graphene reduces or even...

Low resistance Ti-Si-C ohmic contacts for 4H-SiC power devices using laser annealing
2016 Edition, September 1, 2016 - Trans Tech Publications Ltd

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. Non-equilibrium laser silicidations for low-resistance ohmic contact to 4H-SiC C-face with Titanium was demonstrated. Ti is one...

Investigation of the role of Ni in forming ultra-low resistance Ni-Ge-Au ohmic contacts to n/sup +/ GaAs
1996 Edition, January 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Nickel is commonly thought to act as a wetting agent in alloyed Au-Ge ohmic contacts for GaAs-based devices. However work on the optimisation of ohmic contacts for ultra-low resistance has indicated that Ni plays a more complex role. We...

Ti/Au/Al/Ni/Au Low Contact Resistance and Sharp Edge Acuity for Highly Scalable AlGaN/GaN HEMTs
2019 Edition, Volume 40, January 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this letter, we have reported a novel metal scheme Ti/Au/Al/Ni/Au for ohmic contact on AlGaN/GaN high-electron-mobility transistors. The reported metal scheme is observed to show minimum metal out-diffusion and sharp edge acuity at high-temperature annealing, which...

Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs
2015 Edition, Volume 36, March 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report on a new approach to achieve nonalloyed ohmic contacts with record low resistance in GaN-based transistors. We use upward and reverse grading of Al composition in a polarization-graded field-effect transistor structure to eliminate abrupt...

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